2SJ613-TD-E SANYO, 2SJ613-TD-E Datasheet

MOSFET, P CH 20V 6A SOT89

2SJ613-TD-E

Manufacturer Part Number
2SJ613-TD-E
Description
MOSFET, P CH 20V 6A SOT89
Manufacturer
SANYO
Datasheet

Specifications of 2SJ613-TD-E

Transistor Polarity
P Channel
Continuous Drain Current Id
6A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
69mohm
Rds(on) Test Voltage Vgs
-4V
Voltage Vgs Max
10V
Operating Temperature
RoHS Compliant
Ordering number : ENN7296
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking : JT
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Low ON-resistance.
Ultrahigh-speed switching.
2.5V drive.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SANYO Electric Co.,Ltd. Semiconductor Company
V (BR)DSS
R DS (on)1
R DS (on)2
V GS (off)
Symbol
Symbol
V DSS
V GSS
I GSS
I DSS
Tstg
I DP
Tch
P D
yfs
I D
Ultrahigh-Speed Switching Applications
PW 10 s, duty cycle 1%
Mounted on a ceramic board (250mm
Tc=25˚C
I D =--1mA, V GS =0
V DS =- -20V, V GS =0
V GS = 8V, V DS =0
V DS =- -10V, I D =--1mA
V DS =- -10V, I D =--3A
I D =--3A, V GS =- -4V
I D =--1.5A, V GS =- -2.5V
2SJ613
Conditions
Package Dimensions
unit : mm
2062A
Conditions
0.4
2
3
0.8mm)
(Bottom view)
0.75
1.5
3.0
4.5
1.6
2
0.5
[2SJ613]
min
P-Channel Silicon MOSFET
- -0.4
1
--20
4.6
92002 TS IM TA-100195
Ratings
typ
1 : Gate
2 : Drain
3 : Source
SANYO : PCP
Ratings
6.6
53
72
Continued on next page.
--55 to +150
1.5
0.4
2SJ613
max
150
--1.3
--20
--24
1.5
3.5
10
--6
69
98
10
--1
No.7296-1/4
Unit
Unit
m
m
W
W
V
V
A
A
V
V
S
C
C
A
A

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