6MBP50RA-120-55 FUJI ELECTRIC, 6MBP50RA-120-55 Datasheet
6MBP50RA-120-55
Manufacturer Part Number
6MBP50RA-120-55
Description
IPM 6-PACK IGBT MODULE 50A 1200V NPT
Manufacturer
FUJI ELECTRIC
Datasheet
1.6MBP50RA-120-55.pdf
(6 pages)
Specifications of 6MBP50RA-120-55
Module Configuration
Six
Transistor Polarity
N Channel
Dc Collector Current
50A
Collector Emitter Voltage Vces
2.6V
Power Dissipation Max
400W
Collector Emitter Voltage V(br)ceo
1.2kV
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Intelligent Power Module ( R-Series )
I I Maximum Ratings and Characteristics
•
•
•
•
•
Input Signal Threshold Voltage
DC Bus Voltage
DC Bus Voltage (surge)
DC Bus Voltage (short operating)
Collector-Emitter Voltage
Inverter
Collector
Current
Collector Power Dissipation
Voltage of Power Supply for Driver
Input Signal Voltage
Input Signal Current
Alarm Signal Voltage
Alarm Signal Current
Junction Temperature
Operating Temperature
Storage Temperature
Isolation Voltage
Screw Torque
INV
Current of P-Line Side Driver
Current of N-Line Side Driver
Input Zener Voltage
Over Heating Protection Temperature Level
Hysteresis
IGBT Chips Over Heating Protec. Temp. Level
Hysteresis
Inverter Collector Current Protection Level
Over Current Detecting Time
Alarm Signal Hold Time
Limiting Resistor for Alarm
Under Voltage Protection Level
Hysteresis
Switching Time
Thermal Resistance
Absolute Maximum Ratings
Electrical Characteristics of Power Circuit
Electrical Characteristics of Control Circuit
Dynamic Characteristics
Thermal Characteristics
Collector Current At Off Signal Input
Collector-Emitter Saturation Voltage
Forward Voltage of FWD
Items
Items
Items
Items
Items
Continuous
1ms
Duty=62.6%
A.C. 1min.
One Transistor
(One Unit)
(Three Units)
( at T
6MBP 50RA-120
( T
Terminals *1
C
Mounting *1
=T
Symbols
c
-I
V
V
=25°C
V
V
I
I
P
V
V
I
V
I
T
T
T
V
C
CP
C
IN
ALM
j
=125°C, V
j
OP
stg
DC
DC(Surge)
SC
CES
C
CC
IN
ALM
iso
)
Note: *1: Recommendable Value; 2.5 ∼ 3.0 Nm (M5)
Symbols
Symbols
Symbols
Symbols
V
CC
I
V
V
I
I
V
T
T
T
T
I
t
t
R
V
V
t
t
t
R
R
R
CES
CCP
CCN
OC
DOC
ALM
ON
OFF
RR
IN(th)
COH
CH
jOH
jH
CE(Sat)
F
Z
ALM
UV
H
=15V )
th(j-c)
th(j-c)
th(c-f)
( at T
Min.
200
-20
-40
( at T
0
0
0
0
0
0
Ratings
j
=25°C, V
j
=25°C, V
1000
1200
2500
-I
Max.
V
I
f
f
On
Off
R
V
Surface Of IGBT Chip
T
T
Inverter IGBT
Diode
With Thermal Compound
800
900
100
400
V
150
100
125
C
C
SW
SW
3.5
3.5
I
I
j
j
CE
IN
DC
50
50
20
V
15
=50A
=50A
=125°C
=25°C
C
F
CC
CC
=50A, V
=50A, V
1
=0~15kHz, T
=0~15kHz, T
=20kΩ
Z
CC
=1200V, Input Terminal Open
=0V, I
=15V )
=15V )
Conditions
Conditions
Conditions
Conditions
C
Units
DC
=0A, Case Temp.
DC
mA
mA
Nm
°C
W
V
A
V
V
V
=600V
=600V
C
C
=-20~100°C
=-20~100°C
I I Outline Drawing
1425
Min.
Min.
Min.
Min.
1.00
1.25
11.0
110
150
1.5
0.2
0.3
75
10
3
1500
Typ.
Typ.
1.35
1.60
Typ.
Typ.
0.05
8.0
20
20
10
2
IGBT IPM
Max.
Max.
Max.
Max.
0.31
0.70
1575
6x50A
1200V
3.6
0.4
1.70
1.95
12.5
125
1.0
2.6
3.0
18
65
Units
Units
Units
Units
°C/W
mA
mA
ms
°C
µs
µs
V
V
V
A
Ω
V
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6MBP50RA-120-55 Summary of contents
Page 1
Intelligent Power Module ( R-Series ) I I Maximum Ratings and Characteristics • Absolute Maximum Ratings ( T Items DC Bus Voltage DC Bus Voltage (surge) DC Bus Voltage (short operating) Collector-Emitter Voltage Inverter Continuous Collector 1ms Current ...
Page 2
I I Equivalent Circuit Drivers include following functions Œ Short circuit protection circuit Amplifier for driver Ž Undervoltage protection circuit Overcurrent protection circuit IGBT Chip overheating protection IGBT IPM 1200V 6x50A ...
Page 3
I I Control Circuit Power Supply Current vs. Switching Frequency T =100° N-Side P-Side itching Frequency : fsw [kHz] Under Voltage vs. Junction ...
Page 4
I I Inverter C o llector Current vs. Collector-Emitter Voltage ° =17V,15V, 13V ...
Page 5
I I Inverter Transient Thermal Resistance 0 10 FWD - Pulse Width : P Power Derating For IGBT (per device) 400 300 200 100 Case ...
Page 6
I I Inverter Over Current Protection vs. Junction Temperature V = 280 240 200 160 120 Junction Temperature Outline Drawing 80 100 120 140 [°C] j ...