BSP149L6327 Infineon Technologies, BSP149L6327 Datasheet

MOSFET, N, REEL 1K

BSP149L6327

Manufacturer Part Number
BSP149L6327
Description
MOSFET, N, REEL 1K
Manufacturer
Infineon Technologies
Datasheet

Specifications of BSP149L6327

Transistor Polarity
N Channel
Continuous Drain Current Id
480mA
Drain Source Voltage Vds
200V
On Resistance Rds(on)
1.8ohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C
Threshold Voltage Vgs Typ
-1.4V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Rev. 1.2
1)
SIPMOS
Features
• N-channel
• Depletion mode
• dv /dt rated
• Available with V
• Pb-free lead plating; RoHS compliant
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Reverse diode dv /dt
Gate source voltage
ESD sensitivity (HBM) as per
MIL-STD 883
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Type
BSP149
BSP149
see table on next page and diagram 11
®
Small-Signal-Transistor
Package
PG-SOT-223
PG-SOT-223
GS(th)
indicator on reel
j
=25 °C, unless otherwise specified
Tape and Reel Information
L6327: 1000 pcs/reel
L6906: 1000 pcs/reel
sorted in V
Symbol Conditions
I
I
dv /dt
V
P
T
D
D,pulse
j
GS
tot
, T
stg
GS(th)
T
T
T
I
V
di /dt =200 A/µs,
T
T
D
bands
A
A
A
j,max
A
DS
=0.66 A,
page 1
=25 °C
=70 °C
=25 °C
=25 °C
=160 V,
=150 °C
1)
Product Summary
V
R
I
DSS,min
DS
DS(on),max
Marking
BSP149
BSP149
-55 ... 150
55/150/56
Class 1
Value
0.66
0.53
±20
2.6
1.8
PG-SOT-223
6
0.14
200
3.5
BSP149
2005-11-28
Unit
A
kV/µs
V
W
°C
V
A

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BSP149L6327 Summary of contents

Page 1

SIPMOS Small-Signal-Transistor Features • N-channel • Depletion mode • dv /dt rated • Available with V indicator on reel GS(th) • Pb-free lead plating; RoHS compliant Type Package BSP149 PG-SOT-223 BSP149 PG-SOT-223 Maximum ratings =25 °C, unless ...

Page 2

Parameter Thermal characteristics Thermal resistance, junction - soldering point (pin 4) SMD version, device on PCB Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Drain-source cutoff current Gate-source leakage current On-state drain current Drain-source on-state resistance ...

Page 3

Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode ...

Page 4

Power dissipation P =f(T ) tot A 2 1 [° Safe operating area I =f =25 ° parameter limited ...

Page 5

Typ. output characteristics I =f =25 ° parameter 0.8 0.6 0.4 0 Typ. transfer characteristics I =f |>2 ...

Page 6

Drain-source on-state resistance R =f =0. DS(on %98 2 typ 0 -60 - [° Threshold voltage bands I =f ...

Page 7

Forward characteristics of reverse diode I =f parameter 150 °C 1 0.12 A 150 °C, 98% 0.1 0. °C, 98 Drain-source breakdown voltage V =f(T ); ...

Page 8

Package Outline: Footprint: Dimensions in mm Rev. 1.2 Packaging: page 8 BSP149 2005-11-28 ...

Page 9

... Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

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