BSP298 Infineon Technologies, BSP298 Datasheet

MOSFET, N, SOT-223

BSP298

Manufacturer Part Number
BSP298
Description
MOSFET, N, SOT-223
Manufacturer
Infineon Technologies
Datasheet

Specifications of BSP298

Transistor Polarity
N Channel
Continuous Drain Current Id
500mA
Drain Source Voltage Vds
400V
On Resistance Rds(on)
3ohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Package
SOT-223
Vds (max)
400.0 V
Rds (on) (max) (@10v)
3,000.0 mOhm
Rds (on) (max) (@4.5v)
-
Rds (on) (max) (@2.5v)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSP298
Manufacturer:
INFINEON
Quantity:
30 000
SIPMOS
Rev 2.0
• N channel
• Enhancement mode
• Avalanche rated
• V
• Pb-free lead plating; RoHS compliant
Type
BSP 298
BSP 298
Maximum Ratings
Parameter
Continuous drain current
T
DC drain current, pulsed
T
Avalanche energy, single pulse
I
L = 125 mH, T
Gate source voltage
Power dissipation
T
D
A
A
A
GS(th)
= 1.35 A, V
= 26 °C
= 25 °C
= 25 °C
= 2.1 ... 4.0 V
®
Small-Signal Transistor
DD
j
= 25 °C
= 50 V, R
Package
P-SOT-223
PG-SOT-223
GS
= 25
Tape and Reel Information
E6327
L6327
1
Symbol
I
I
E
V
P
D
Dpuls
AS
GS
tot
Pin 1
G
Marking
BSP 298
BSP 298
Values
Pin 2
130
0.5
1.8
2
D
20
Pin 3
S
2005-11-23
BSP 298
Unit
A
mJ
V
W
Pin 4
D

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BSP298 Summary of contents

Page 1

SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • 2.1 ... 4.0 V GS(th) • Pb-free lead plating; RoHS compliant Type Package BSP 298 P-SOT-223 BSP 298 PG-SOT-223 Maximum Ratings Parameter Continuous drain ...

Page 2

Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Therminal resistance, junction-soldering point DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 1) Transistor on epoxy pcb ...

Page 3

Electrical Characteristics Parameter Dynamic Characteristics Transconductance 0 DS(on)max, D Input capacitance = MHz Output ...

Page 4

Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current °C A Inverse diode direct current,pulsed °C A Inverse diode forward voltage ...

Page 5

Power dissipation tot A 2.0 W 1.6 P tot 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 Safe operating area I =f parameter : ...

Page 6

Typ. output characteristics parameter µ ° 1 tot 1.0 I ...

Page 7

Drain-source on-resistance (on) j parameter 0 7.5 6.5 6 (on) 5.5 5.0 4.5 4.0 98% 3.5 3.0 typ 2.5 2.0 1.5 1.0 0.5 0.0 ...

Page 8

Avalanche energy parameter 1. 125 mH GS 140 mJ 120 E 110 AS 100 ...

Page 9

Package outlines SOT-223 Dimensions in mm Rev 2.0 9 BSP 298 2005-11-23 ...

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