BSP372L6327 Infineon Technologies, BSP372L6327 Datasheet

MOSFET, N, SOT-223

BSP372L6327

Manufacturer Part Number
BSP372L6327
Description
MOSFET, N, SOT-223
Manufacturer
Infineon Technologies
Datasheet

Specifications of BSP372L6327

Transistor Polarity
N Channel
Continuous Drain Current Id
1.7A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
310mohm
Rds(on) Test Voltage Vgs
5V
Voltage Vgs Max
14V
Operating Temperature Range
-55°C To
Threshold Voltage Vgs Typ
1.9V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSP372L6327
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
BSP372L6327
Manufacturer:
INFINEO
Quantity:
17 357
SIPMOS
• N channel
• Enhancement mode
• Logic Level
• Avalanche rated
• V
Rev 1.1
Type
BSP 372
Type
BSP 372
BSP 372
Maximum Ratings
Parameter
Continuous drain current
T
DC drain current, pulsed
T
Avalanche energy, single pulse
I
L = 23.3 mH, T
Gate source voltage
Gate-source peak voltage,aperiodic
Power dissipation
T
D
Pb-free lead plating; RoHS compliant
A
A
A
GS(th)
= 1.7 A, V
= 28 ˚C
= 25 ˚C
= 25 ˚C
®
= 0.8 ...2.0 V
Small-Signal Transistor
DD
j
= 25 V, R
= 25 ˚C
P-SOT-223
PG-SOT-223
V
100 V
Package
DS
GS
= 25
I
1.7 A
D
R
0.31
Tape and Reel Information
E6327
L6327
DS(on)
1
Symbol
I
I
E
V
V
P
D
Dpuls
AS
GS
gs
tot
Pin 1
G
Values
±
±
Pin 2
1.7
6.8
1.8
45
14
20
D
Pin 3
S
BSP 372
2005-11-23
Unit
A
mJ
V
W
Pin 4
D

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BSP372L6327 Summary of contents

Page 1

SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • Avalanche rated • 0.8 ...2.0 V GS(th) • Pb-free lead plating; RoHS compliant Type V DS BSP 372 100 V Type Package P-SOT-223 BSP ...

Page 2

Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Thermal resistance, junction-soldering point IEC climatic category, DIN IEC 68-1 1) Transistor on epoxy pcb 1,5 mm with 6 ...

Page 3

Electrical Characteristics Parameter Dynamic Characteristics Transconductance ≥ 1 DS(on)max, D Input capacitance MHz GS DS Output ...

Page 4

Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current ˚C A Inverse diode direct current,pulsed ˚C A Inverse diode forward voltage 1 ...

Page 5

Power dissipation = ƒ tot A 2.0 W 1.6 P tot 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 Safe operating area I = parameter : D ...

Page 6

Typ. output characteristics = ƒ parameter µ 3 tot 3 2.8 2.4 2.0 1.6 1.2 ...

Page 7

Drain-source on-resistance = ƒ (on) j parameter 1 1.0 Ω 0 (on) 0.7 0.6 0.5 98% 0.4 typ 0.3 0.2 0.1 0.0 -60 -20 ...

Page 8

T Avalanche energy E AS parameter 1 Ω 23 ...

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