BSP373 Infineon Technologies, BSP373 Datasheet

MOSFET, N, SOT-223

BSP373

Manufacturer Part Number
BSP373
Description
MOSFET, N, SOT-223
Manufacturer
Infineon Technologies
Datasheet

Specifications of BSP373

Transistor Polarity
N Channel
Continuous Drain Current Id
1.7A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
300mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Package
SOT-223
Vds (max)
100.0 V
Rds (on) (max) (@10v)
300.0 mOhm
Rds (on) (max) (@4.5v)
-
Rds (on) (max) (@2.5v)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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SIPMOS
• N channel
• Enhancement mode
• Avalanche rated
• V
Rev 1.1
Type
BSP 373
Type
BSP 373
BSP 373
Maximum Ratings
Parameter
Continuous drain current
T
DC drain current, pulsed
T
Avalanche energy, single pulse
I
L = 23.3 mH, T
Gate source voltage
Power dissipation
T
D
Pb-free lead plating; RoHS compliant available
A
A
A
GS(th)
= 1.7 A, V
= 28 ˚C
= 25 ˚C
= 25 ˚C
= 2.1 ... 4.0 V
®
Small-Signal Transistor
DD
j
= 25 V, R
= 25 ˚C
V
100 V
RoHS compliant
No
Yes
DS
GS
= 25
I
1.7 A
D
L6327
R
0.3
Tape and Reel Information
E6327
DS(on)
1
Symbol
I
I
E
V
P
D
Dpuls
AS
GS
tot
Package
PG-SOT-223
Pin 1
G
Values
±
Pin 2
Marking
BSP 373
1.7
6.8
1.8
45
D
20
Pin 3
S
BSP 373
2005-10-27
Unit
A
mJ
V
W
Pin 4
D

Related parts for BSP373

BSP373 Summary of contents

Page 1

SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • 2.1 ... 4.0 V GS(th) • Pb-free lead plating; RoHS compliant available Type V DS BSP 373 100 V Type RoHS compliant BSP 373 ...

Page 2

Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Thermal resistance, junction-soldering point DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 1) Transistor on epoxy pcb ...

Page 3

Electrical Characteristics Parameter Dynamic Characteristics Transconductance ≥ 1 DS(on)max, D Input capacitance MHz GS DS Output ...

Page 4

Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current ˚C A Inverse diode direct current,pulsed ˚C A Inverse diode forward voltage 1 ...

Page 5

Power dissipation = ƒ tot A 2.0 W 1.6 P tot 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 Safe operating area I = parameter : D ...

Page 6

Typ. output characteristics = ƒ parameter µ 3 tot 3 2.8 2.4 2.0 1.6 1.2 ...

Page 7

Drain-source on-resistance = ƒ (on) j parameter 1 0.75 Ω 0.65 R 0.60 DS (on) 0.55 0.50 0.45 0.40 98% 0.35 0.30 0.25 typ 0.20 0.15 ...

Page 8

T Avalanche energy E AS parameter 1 Ω 23 ...

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