BUK6E4R0-75C NXP Semiconductors, BUK6E4R0-75C Datasheet

MOSFET,N CH,75V,120A,SOT226

BUK6E4R0-75C

Manufacturer Part Number
BUK6E4R0-75C
Description
MOSFET,N CH,75V,120A,SOT226
Manufacturer
NXP Semiconductors
Datasheet
1.BUK6E4R0-75C127.pdf (14 pages)

Specifications of BUK6E4R0-75C

Transistor Polarity
N Channel
Drain Source Voltage Vds
120V
On Resistance Rds(on)
3600µohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
16V
Operating Temperature Range
-55°C To +175°C
Transistor
RoHS Compliant
Transistor Case Style
SOT-226
Rohs Compliant
Yes
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using advanced TrenchMOS technology. This product has been
designed and qualified to the appropriate AEC Q101 standard for use in high performance
automotive applications.
Table 1.
Symbol
V
I
P
Static characteristics
R
D
DS
tot
DSon
BUK6E4R0-75C
N-channel TrenchMOS FET
Rev. 02 — 30 August 2010
AEC Q101 compliant
Suitable for intermediate level gate
drive sources
12 V Automotive systems
Electric and electro-hydraulic power
steering
Motors, lamps and solenoid control
Quick reference data
Parameter
drain-source voltage
drain current
total power
dissipation
drain-source on-state
resistance
Conditions
T
V
see
T
V
T
j
mb
j
GS
GS
≥ 25 °C; T
= 25 °C; see
Figure 1
= 25 °C; see
= 10 V; T
= 10 V; I
j
D
≤ 175 °C
mb
= 25 A;
Figure 11
= 25 °C;
Figure 2
Suitable for thermally demanding
environments due to 175 °C rating
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power
switching
[1]
Min
-
-
-
-
Product data sheet
Typ
-
-
-
3.6
Max Unit
75
120
306
4.2
V
A
W
mΩ

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BUK6E4R0-75C Summary of contents

Page 1

... BUK6E4R0-75C N-channel TrenchMOS FET Rev. 02 — 30 August 2010 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications ...

Page 2

... see GS see Figure 14 Simplified outline SOT226 (I2PAK) Description plastic single-ended package (I2PAK); TO-262 All information provided in this document is subject to legal disclaimers. Rev. 02 — 30 August 2010 BUK6E4R0-75C N-channel TrenchMOS FET Min Typ ≤ sup = Figure 13; Graphic symbol mbb076 © ...

Page 3

... Figure °C mb ≤ 10 µs; pulsed ° ≤ 120 sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 02 — 30 August 2010 BUK6E4R0-75C N-channel TrenchMOS FET Min Max - 75 [1] -16 16 [2] -20 20 [3] Figure 1 - 120 [3] Figure 1 - 120 - 670 - ...

Page 4

... Product data sheet 003aae374 P der (%) 150 200 T (°C) mb Fig DSon All information provided in this document is subject to legal disclaimers. Rev. 02 — 30 August 2010 BUK6E4R0-75C N-channel TrenchMOS FET 120 100 150 Normalized total power dissipation as a function of mounting base temperature =10 μ 100 μ 100 ...

Page 5

... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK6E4R0-75C Product data sheet Conditions see Figure 4 vertical in free air - All information provided in this document is subject to legal disclaimers. Rev. 02 — 30 August 2010 BUK6E4R0-75C N-channel TrenchMOS FET Min Typ Max - - 0. 003aae375 t p δ ...

Page 6

... Ω R G(ext) from drain lead 6 mm from package to centre of die ; °C j from source lead to source bond pad ; °C j All information provided in this document is subject to legal disclaimers. Rev. 02 — 30 August 2010 BUK6E4R0-75C N-channel TrenchMOS FET Min Typ Max = 25 ° -55 ° 1.8 2.3 2 ...

Page 7

... V (V) DS Fig 6. 003aae383 250 g fs (S) 200 150 100 (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 30 August 2010 BUK6E4R0-75C N-channel TrenchMOS FET Min Typ = 25 ° 218 175 ° < DSon Transfer characteristics: drain current as a function of gate-source voltage ...

Page 8

... Fig 10. Gate-source threshold voltage as a function of 003aae381 3.8 4.0 4.5 5 120 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 02 — 30 August 2010 BUK6E4R0-75C N-channel TrenchMOS FET 4 3 max @1mA 2 typ @1mA min @2.5mA 120 junction temperature ...

Page 9

... Fig 14. Gate-source voltage as a function of gate 003aae451 (A) C iss C oss C rss (V) DS Fig 16. Source current as a function of source-drain All information provided in this document is subject to legal disclaimers. Rev. 02 — 30 August 2010 BUK6E4R0-75C N-channel TrenchMOS FET (V) 8 14V 100 150 charge; typical values ...

Page 10

... max 0.7 1.6 10.3 11 2.54 0.4 1.2 9.7 REFERENCES JEDEC JEITA TO-262 All information provided in this document is subject to legal disclaimers. Rev. 02 — 30 August 2010 BUK6E4R0-75C N-channel TrenchMOS FET mounting base 15.0 3.30 2.6 13.5 2.79 2.2 EUROPEAN PROJECTION SOT226 ISSUE DATE ...

Page 11

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK6E4R0-75C v.2 20100830 • Modifications: Status changed from objective to product. • Various changes to content. BUK6E4R0-75C v.1 20100709 BUK6E4R0-75C Product data sheet Data sheet status Change notice Product data sheet - Objective data sheet - All information provided in this document is subject to legal disclaimers ...

Page 12

... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 02 — 30 August 2010 BUK6E4R0-75C N-channel TrenchMOS FET © NXP B.V. 2010. All rights reserved ...

Page 13

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 30 August 2010 BUK6E4R0-75C N-channel TrenchMOS FET Trademarks © NXP B.V. 2010. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 30 August 2010 Document identifier: BUK6E4R0-75C ...

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