DSAI75-18B IXYS SEMICONDUCTOR, DSAI75-18B Datasheet - Page 2

• Manufacturer Part Number: DSAI75-18B
• Description: DIODE,RECTI,1200V,110A,STUD CATH,DO5
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of DSAI75-18B

• Diode Type: Avalanche
• Repetitive Reverse Voltage Vrrm Max: 1.8kV
• Forward Current If(av): 110A
• Forward Voltage Vf Max: 1.17V
• Forward Surge Current Ifsm Max: 1.5kA
• Operating Temperature Range: -40°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Z
Fig. 1 Forward characteristics
Fig. 4 Power dissipation versus forward current and ambient temperature
Fig. 6 Transient thermal impedance junction to heatsink
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I
P
F
thJH
F
200
150
100
200
150
100
K/W
1.5
1.0
0.5
0.0
50
W
50
A
0
0
10
0.0
0
-3
T
T
VJ
VJ
= 180°C
= 25°C
0.5
50
10
-2
typ.
1.0
100
V
F
10
lim.
DC
180° sin
120°
-1
I
60°
30°
F(AV)M
1.5
150
V
A
I
10
FSM
Fig. 2 Surge overload current
1500
1000
200
0
500
0
A
0
0
10
-3
I
50Hz, 80%V
FSM
: crest value, t: duration
T
50
VJ
10
= 180°C
1
10
-2
RRM
100
T
T
10
amb
VJ
10
= 45°C
2
-1
t
150
t
120°
180°
DC
30°
60°
R
1 K/W
1.2 K/W
1.6 K/W
2 K/W
3 K/W
4 K/W
s
s
thJA
°C
:
10
200
10
0
3
I
I
Fig. 3 I
F(AV)M
Fig. 5 Max. forward current at case
R
Constants for Z
2
t
thJH
1
2
3
4
200
150
100
180°
120°
A
10
10
i
DC
6
4
2
50
d
60°
30°
2
A
0
s
for various conduction angles d:
5
4
DS
DSA 75
1
0
T
temperature
V
2
VJ
t versus time (1-10 ms)
R
= 45°C
= 0 V
40
R
0.0731
0.1234
0.4035
0.3000
thi
R
75
thJH
thJH
2
(K/W)
0.900
1.028
1.085
1.272
1.476
80
(K/W)
calculation:
3
T
120
VJ
4 5 6 7 8 9
DSI 75
DSAI 75
= 180°C
t
0.0015
0.0237
0.4838
1.5
i
T
(s)
DC
180° sin
120°
c
60°
30°
ase
160
t
°C
2 - 2
ms
200
10