MOSFET, N, D2-PAK

FCB11N60

Manufacturer Part NumberFCB11N60
DescriptionMOSFET, N, D2-PAK
ManufacturerFairchild Semiconductor
FCB11N60 datasheet
 


Specifications of FCB11N60

Transistor PolarityN ChannelContinuous Drain Current Id11A
Drain Source Voltage Vds600VOn Resistance Rds(on)320mohm
Rds(on) Test Voltage Vgs10VVoltage Vgs Max30V
Operating Temperature Range-55°C ToThreshold Voltage Vgs Typ5V
Rohs CompliantYesLead Free Status / RoHS StatusLead free / RoHS Compliant
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FCB11N60
600V N-Channel MOSFET
Features
• 650V @T
= 150°C
J
• Typ. R
= 0.32Ω
DS(on)
• Ultra low gate charge (typ. Q
= 40nC)
g
• Low effective output capacitance (typ. C
• 100% avalanche tested
• RoHS Compliant
G
Absolute Maximum Ratings
Symbol
V
Drain-Source Voltage
DSS
I
Drain Current
D
I
Drain Current
DM
V
Gate-Source voltage
GSS
E
Single Pulsed Avalanche Energy
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
dv/dt
Peak Diode Recovery dv/dt
P
Power Dissipation
D
T
T
Operating and Storage Temperature Range
J,
STG
T
Maximum Lead Temperature for Soldering Purpose,
L
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
R
Thermal Resistance, Junction-to-Case
θJC
R
*
Thermal Resistance, Junction-to-Ambient*
θJA
R
Thermal Resistance, Junction-to-Ambient
θJA
* When mounted on the minimum pad size recommended (PCB Mount)
©2008 Fairchild Semiconductor Corporation
FCB11N60 Rev. A3
Description
SuperFET
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
.eff = 95pF)
This advanced technology has been tailored to minimize con-
oss
duction loss, provide superior switching performance, and with-
stand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system min-
iaturization and higher efficiency.
D
S
Parameter
- Continuous (T
= 25°C)
C
- Continuous (T
= 100°C)
C
- Pulsed
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
(T
= 25°C)
C
- Derate above 25°C
Parameter
1
December 2008
SuperFET
TM
is, Fairchild’s proprietary, new generation of high
D
G
S
FCB11N60
600
11
7
33
± 30
340
11
12.5
4.5
125
1.0
-55 to +150
300
FCB11N60
1.0
40
62.5
www.fairchildsemi.com
TM
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W

FCB11N60 Summary of contents

  • Page 1

    ... R Thermal Resistance, Junction-to-Ambient θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2008 Fairchild Semiconductor Corporation FCB11N60 Rev. A3 Description SuperFET voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. .eff = 95pF) ...

  • Page 2

    ... ≤ 11A, di/dt ≤ 200A/µs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FCB11N60 Rev. A3 Package Reel Size 2 D -PAK 330mm T = 25°C unless otherwise noted C Conditions 250µA, T ...

  • Page 3

    ... I , Drain Current [A] D Figure 5. Capacitance Characteristics 6000 5000 4000 C oss 3000 C 2000 iss C 1000 rss Drain-Source Voltage [V] DS FCB11N60 Rev. A3 Figure 2. Transfer Characteristics Notes : 1. 250 µ s Pulse Test Figure 4. Body Diode Forward Voltage 10V 20V Note : ...

  • Page 4

    ... T = 150 Single Pulse - Drain-Source Voltage [V] DS Figure 11. Transient Thermal Response Curve FCB11N60 Rev. A3 (Continued) Figure 8. On-Resistance Variation vs. Temperature 3.0 2.5 2.0 1.5 1.0 Notes : 250 µ A 0.5 D 0.0 100 150 200 -100 o C] Figure 10. Maximum Drain Current vs. Case Temperature 12.5 10.0 ...

  • Page 5

    ... 3mA 3mA 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V FCB11N60 Rev. A3 Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V 300nF 300nF DUT DUT Resistive Switching Test Circuit & Waveforms ...

  • Page 6

    ... Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FCB11N60 Rev. A3 Peak Diode Recovery dv/dt Test Circuit & Waveforms + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period controlled by pulse period ...

  • Page 7

    ... Mechanical Dimensions FCB11N60 Rev -PAK 2 7 Dimensions in Millimeters www.fairchildsemi.com ...

  • Page 8

    ... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FCB11N60 Rev. A3 ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ QS™ Green FPS™ e-Series™ ...