FGA25N120ANTD Fairchild Semiconductor, FGA25N120ANTD Datasheet - Page 4

• Manufacturer Part Number: FGA25N120ANTD
• Description: IGBT,NPT,TO-3PN
• Manufacturer: Fairchild Semiconductor

Specifications of FGA25N120ANTD

• Transistor Type: IGBT
• Dc Collector Current: 50A
• Collector Emitter Voltage Vces: 2.5V
• Power Dissipation Max: 312W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Power Dissipation Pd: 312W
• Rohs Compliant: Yes

FGA25N120ANTD / FGA25N120ANTD_F109 Rev. B2
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 3. Saturation Voltage vs. Case
Figure 5. Saturation Voltage vs. V
180
160
140
120
100
3.0
2.5
2.0
1.5
20
16
12
80
60
40
20
8
4
0
0
25
0
0
T
Common Emitter
V
Temperature at Variant Current Level
C
GE
= 25
= 15V
°
I
C
C
= 12.5A
4
2
Collector-Emitter Voltage, V
Gate-Emitter Voltage, V
50
Case Temperature, T
17V
20V
8
4
40A
25A
15V 12V
75
12
6
C
GE
[
°
Common Emitter
T
C]
[V]
CE
100
C
I
= 25
C
[V]
16
= 25A
GE
8
40A
°
C
V
GE
= 6V
10V
9V
8V
7V
125
20
10
4
Figure 2. Typical Saturation Voltage
Figure 4. Saturation Voltage vs. V
Figure 6. Saturation Voltage vs. V
120
100
80
60
40
20
20
16
12
20
16
12
0
8
4
0
8
4
0
0
0
0
Characteristics
Common Emitter
V
T
T
C
C
GE
= 25
= 125
= 15V
I
C
°
°
I
C
C
C
= 12.5A
1
4
4
Collector-Emitter Voltage, V
= 12.5A
Gate-Emitter Voltage, V
Gate-Emitter Voltage, V
2
8
8
40A
25A
40A
25A
12
12
3
GE
GE
CE
Common Emitter
T
Common Emitter
T
[V]
[V]
C
C
[V]
= -40
= 125
GE
GE
16
16
4
°
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C
°
C
20
20
5