FGA25N120ANTD Fairchild Semiconductor, FGA25N120ANTD Datasheet - Page 6
FGA25N120ANTD
Manufacturer Part Number
FGA25N120ANTD
Description
IGBT,NPT,TO-3PN
Manufacturer
Fairchild Semiconductor
Datasheet
1.FGA25N120ANTD.pdf
(9 pages)
Specifications of FGA25N120ANTD
Transistor Type
IGBT
Dc Collector Current
50A
Collector Emitter Voltage Vces
2.5V
Power Dissipation Max
312W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-55°C To +150°C
Transistor Case
RoHS Compliant
Power Dissipation Pd
312W
Rohs Compliant
Yes
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FGA25N120ANTD / FGA25N120ANTD_F109 Rev. B2
Typical Performance Characteristics
Figure 13. Switching Loss vs. Collector Current
Figure 15. SOA Characteristics
0.01
100
0.1
0.1
10
10
1
1
0.1
10
Common Emitter
V
T
T
Ic MAX (Pulsed)
Ic MAX (Continuous)
Single Nonrepetitive
Pulse T
Curves must be derated
linearly with increase
in temperature
GE
C
C
= 25
= 125
=
±
1 1 0
1
15V, R
°
C
C
°
C
= 25
Collector - Emitter Voltage, V
1
20
°
G
C
= 10
Collector Current, I
1 E - 3
0 . 0 1
0 .
Ω
1 E - 5
10
DC Operation
30
0.2
0.1
0.05
0.02
0.01
0.5
Figure 17. Transient Thermal Impedance of IGBT
single pulse
C
100
[A]
1 E - 4
1ms
CE
40
[V]
100
µ
s
Eoff
1000
Eon
50
µ
s
R e c t a n g u l a r P u l s e D u r a t i o n [ s e c ]
50
1 E - 3
(Continued)
6
0 . 0 1
Figure 14. Gate Charge Characteristics
Figure 16. Turn-Off SOA
100
16
14
12
10
10
8
6
4
2
0
1
0 . 1
0
1
Common Emitter
R
T
C
L
= 24
= 25
20
Ω
°
Pdm
C
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + T
40
Collector-Emitter Voltage, V
60
t1
1
10
Gate Charge, Q
t2
Safe Operating Area
V
GE
80
= 15V, T
Vcc = 200V
100
C
C
120
= 125
1 0
100
g
[nC]
°
140
C
CE
[V]
160
400V
www.fairchildsemi.com
600V
180
1000
200