MOSFET, N, D-PAK

FQD18N20V2

Manufacturer Part NumberFQD18N20V2
DescriptionMOSFET, N, D-PAK
ManufacturerFairchild Semiconductor
FQD18N20V2 datasheet
 

Specifications of FQD18N20V2

Transistor PolarityN ChannelContinuous Drain Current Id15A
Drain Source Voltage Vds200VOn Resistance Rds(on)140mohm
Rds(on) Test Voltage Vgs10VVoltage Vgs Max30V
Operating Temperature Range-55°C ToThreshold Voltage Vgs Typ5V
Rohs CompliantYesLead Free Status / RoHS StatusLead free / RoHS Compliant
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FQD18N20V2 / FQU18N20V2
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, high
efficiency switching for DC/DC converters, and DC motor
control.
D
D-PAK
G
S
FQD Series
Absolute Maximum Ratings
Symbol
V
Drain-Source Voltage
DSS
I
- Continuous (T
Drain Current
D
- Continuous (T
I
Drain Current
- Pulsed
DM
V
Gate-Source Voltage
GSS
E
Single Pulsed Avalanche Energy
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
dv/dt
Peak Diode Recovery dv/dt
Power Dissipation (T
P
D
Power Dissipation (T
- Derate above 25°C
T
, T
Operating and Storage Temperature Range
J
STG
Maximum lead temperature for soldering purposes,
T
L
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
R
Thermal Resistance, Junction-to-Case
JC
R
Thermal Resistance, Junction-to-Ambient *
JA
R
Thermal Resistance, Junction-to-Ambient
JA
* When mounted on the minimum pad size recommended (PCB Mount)
©2009 Fairchild Semiconductor Corporation
Features
• 15A, 200V, R
• Low gate charge ( typical 20 nC)
• Low Crss ( typical 25 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS Compliant
I-PAK
FQU Series
G
D
S
T
= 25°C unless otherwise noted
C
Parameter
= 25°C)
C
= 100°C)
C
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
= 25°C) *
A
= 25°C)
C
Parameter
January 2009
QFET
= 0.14
@V
= 10 V
DS(on)
GS
D
!
!
"
"
! "
! "
G
"
"
!
!
"
"
!
!
S
FQD18N20V2 / FQU18N20V2
Units
200
15
9.75
60
30
340
mJ
15
8.3
mJ
6.5
V/ns
2.5
83
0.67
W/°C
-55 to +150
300
Typ
Max
Units
--
1.5
°C/W
--
50
°C/W
--
110
°C/W
Rev. B2,January 2009
®
V
A
A
A
V
A
W
W
°C
°C

FQD18N20V2 Summary of contents

  • Page 1

    ... A = 25°C) C Parameter January 2009 QFET = 0. DS(on " " ! " ! " G " " " " FQD18N20V2 / FQU18N20V2 Units 200 15 9. 340 mJ 15 8.3 mJ 6.5 V/ns 2.5 83 0.67 W/°C -55 to +150 300 Typ Max Units -- 1.5 °C °C/W -- 110 ° ...

  • Page 2

    ... Repetitive Rating : Pulse width limited by maximum junction temperature 1.58mH 18A 50V ≤ 18A, di/dt ≤ 200A ≤ DSS, 4. Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ Essentially independent of operating temperature ©2009 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25° 200 ...

  • Page 3

    ... I , Drain Current [A] D Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 2500 2000 1500 1000 C 500 C rss Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2009 Fairchild Semiconductor Corporation ※ Notes : 1. 250 μ s Pulse Test ℃ 10V 20V ※ Note : ℃ ...

  • Page 4

    ... 150 Single Pulse - Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2009 Fairchild Semiconductor Corporation (Continued) 3.0 2.5 2.0 1.5 1.0 ※ Notes : 0 250 μ 0.0 100 150 200 -100 o C] Figure 8. On-Resistance Variation 20 15 100 Figure 10. Maximum Drain Current ※ ...

  • Page 5

    ... Resistive Switching Test Circuit & Waveforms 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2009 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT 10% 10 DUT DUT ...

  • Page 6

    ... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2009 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

  • Page 7

    ... Mechanical Dimensions TO-252 (DPAK) (FS PKG Code 36) ©2009 Fairchild Semiconductor Corporation 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: millimeters Part Weight per unit (gram): 0.33 Rev. B2, January 2009 ...

  • Page 8

    ... Mechanical Dimensions ©2009 Fairchild Semiconductor Corporation I - PAK Dimensions in Millimeters Rev. B2, January 2009 ...

  • Page 9

    ... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ ...