IXFH15N100 IXYS SEMICONDUCTOR, IXFH15N100 Datasheet

MOSFET, N, TO-247

IXFH15N100

Manufacturer Part Number
IXFH15N100
Description
MOSFET, N, TO-247
Manufacturer
IXYS SEMICONDUCTOR
Datasheet
1.IXFX15N100.pdf (4 pages)

Specifications of IXFH15N100

Transistor Polarity
N Channel
Continuous Drain Current Id
15A
Drain Source Voltage Vds
1kV
On Resistance Rds(on)
700mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To
Threshold Voltage Vgs Typ
4.5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IXFH15N100Q
Manufacturer:
IXYS
Quantity:
18 000
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IXFH15N100Q3
Manufacturer:
LAMBDA
Quantity:
101
© 2000 IXYS All rights reserved
HiPerFET
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t
Preliminary data sheet
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
M
Weight
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
V
V
I
I
R
DM
AR
D25
GSS
DSS
L
J
JM
stg
DSS
DGR
GS
GSM
AR
D
DSS
GS(th)
d
DS(on)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
Test Conditions
V
V
V
V
V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
S
V
C
C
C
C
C
J
J
J
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
£ I
£ 150°C, R
= 25°C
= 0 V, I
= V
= ±20 V
= 0.8 • V
= 0 V
= 10 V, I
DM
TM
, di/dt £ 100 A/ms, V
rr
GS
, HDMOS
, I
D
D
DC
D
= 1 mA
DSS
= 4 mA
, V
G
= 0.5 • I
= 2 W
DS
= 0
D25
TM
GS
= 1 MW
Family
DD
T
T
J
J
£ V
= 25°C
= 125°C
(T
14N100
15N100
DSS
IXFH/IXFT/IXFX14 N100 1000 V
IXFH/IXFT/IXFX15 N100 1000 V
J
= 25°C, unless otherwise specified)
JM
,
14N100
15N100
14N100
15N100
14N100
15N100
1000
min.
2.5
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
1.13/10
typ.
1000
1000
±20
±30
360
150
300
6
14
15
56
60
14
15
45
5
max.
±100
0.75
0.70
250
Nm/lb.in.
4.5
1
V/ns
mJ
mA
g
°C
°C
°C
°C
nA
mA
W
W
W
V
V
V
V
V
V
A
A
A
A
A
A
TO-247 AD
(IXFH)
TO-268 (D3)
(IXFT)
Features
Applications
Advantages
PLUS 247
(IXFX)
International standard packages
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic Rectifier
AC motor control
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole) or
mounting clip or spring (PLUS 247
High power surface mountable package
High power density
t
rr
V
£ 200 ns
DSS
DS (on)
G
TM
D
HDMOS
G
14 A 0.75 W
15 A 0.70 W
I
D25
S
TM
process
97535B (1/99)
R
DS(on)
TM
(TAB)
(TAB)
(TAB)
1 - 4
)

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IXFH15N100 Summary of contents

Page 1

TM HiPerFET Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low t , HDMOS rr Preliminary data sheet Symbol Test Conditions 25°C to 150°C DSS 25°C to 150°C; R DGR J V Continuous GS ...

Page 2

... Pulse test, t £ 300 ms, duty cycle d £ -di/dt = 100 A/ms 100 TO-268AA (D PAK) © 2000 IXYS All rights reserved IXFH14N100 IXFH15N100 Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max. , pulse test 6 10 D25 4500 430 150 0.5 • DSS ...

Page 3

... 125 GS J 1.8 1.6 1.4 1 1.0 0 Amperes D Fig.3 R vs. Drain Current DS(on) 20 IXF_15N100 16 12 IXF_14N100 -50 - Degrees C C Fig.5 Drain Current vs. Case Temperature © 2000 IXYS All rights reserved IXFH14N100 IXFH15N100 100 125 150 IXFT14N100 IXFX15N100 IXFT15N100 IXFX14N100 125 Volts DS Fig.2 Output characteristics at elevated temperature 2 ...

Page 4

... 125 0.4 0.6 0.8 1 Volts SD Fig.9 Source current vs Source drain voltage. 1 0.1 0. Fig.10 Transient Thermal Impedance © 2000 IXYS All rights reserved IXFH14N100 IXFH15N100 5000 2500 1000 500 250 100 200 240 280 1.2 1.4 1 Pulse Width - Seconds IXFT14N100 IXFX15N100 IXFT15N100 ...

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