IXFH50N20 IXYS SEMICONDUCTOR, IXFH50N20 Datasheet

IXFH50N20

Manufacturer Part Number

IXFH50N20

Description

MOSFET, N, TO-247

Manufacturer

IXYS SEMICONDUCTOR

Datasheet

1.IXFH50N20.pdf (4 pages)

Specifications of IXFH50N20

Transistor Polarity

N Channel

Continuous Drain Current Id

50A

Drain Source Voltage Vds

200V

On Resistance Rds(on)

45mohm

Rds(on) Test Voltage Vgs

10V

Voltage Vgs Max

20V

Operating Temperature Range

-55Â°C To

Threshold Voltage Vgs Typ

Rohs Compliant

Yes

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IXFH50N20

Manufacturer:

IXYS

Quantity:

167

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IXFH50N20

Manufacturer:

FUJI

Quantity:

6 000

Company:

BOSTOCK HK LIMITED

Part Number:

IXFH50N20

Manufacturer:

Current page: 1 of 4
Download datasheet (105Kb)

HiPerFET

Power MOSFETs

Symbol

dv/dt

Weight

Symbol

IXYS reserves the right to change limits, test conditions, and dimensions.

N-Channel Enhancement Mode

High dv/dt, Low t

D25

GSS

DSS

stg

DGR

DSS

GSM

DSS

GS(th)

Test Conditions

Continuous

Transient

1.6 mm (0.062 in.) from case for 10 s

Mounting torque

Test Conditions

£ 150°C, R

= 25°C to 150°C

= 25°C to 150°C; R

= 25°C

= 25°C, pulse width limited by T

= 25°C

£ I

= 25°C

= 0 V, I

= V

= ±20 V

= 0.8 • V

= 0 V

, di/dt £ 100 A/ms, V

, HDMOS

, I

= 250 mA

DSS

= 4 mA

, V

= 2 W

= 0

= 1 MW

Family

£ V

= 25°C

= 125°C

DSS

= 25°C, unless otherwise specified)

IXFH/IXFM42N20

IXFH/IXFM/IXFT50N20

IXFH/IXFT58N20

42N20

50N20

58N20

42N20

50N20

58N20

42N20

50N20

58N20

TO-204 = 18 g, TO-247 = 6 g

min.

200

Characteristic Values

-55 ... +150

Maximum Ratings

typ.

1.13/10 Nm/lb.in.

200

±20

±30

168

200

232

300

150

300

max.

±100

200

1 mA

V/ns

°C

TO-204 AE (IXFM)

TO-268 (D3) Case Style

G = Gate,

S = Source,

Features

• International standard packages

• Low R

• Rugged polysilicon gate cell structure

• Unclamped Inductive Switching (UIS)

• Low package inductance

• Fast intrinsic Rectifier

Applications

• DC-DC converters

• Synchronous rectification

• Battery chargers

• Switched-mode and resonant-mode

• DC choppers

• AC motor control

• Temperature and lighting controls

• Low voltage relays

Advantages

• Easy to mount with 1 screw (TO-247)

• High power surface mountable package

• High power density

TO-247 AD (IXFH)

rated

- easy to drive and to protect

power supplies

(isolated mounting screw hole)

200 V

DS (on)

DSS

£ 200 ns

HDMOS

D = Drain,

TAB = Drain

42 A 60mW

50 A 45mW

58 A 40mW

D25

process

91522H (2/98)

DS(on)

(TAB)

1 - 4

Related parts for IXFH50N20

IXFH50N20 Summary of contents

Page 1

TM HiPerFET Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low t , HDMOS rr Symbol Test Conditions 25°C to 150°C DSS 25°C to 150°C; R DGR J V Continuous GS V Transient GSM ...

Page 2

Symbol Test Conditions (T = 25°C, unless otherwise specified 0.5 I DS(on D25 Pulse test, t £ 300 ms, duty cycle d £ ...

Page 3

Fig. 1 Output Characteristics 100 T = 25° Volts DS Fig vs. Drain Current DS(on) 2.6 2.4 2.2 2.0 ...

Page 4

Fig.7 Gate Charge Characteristic Curve 100V 50A 10mA 100 125 150 175 200 Gate Charge - nCoulombs Fig.9 Capacitance ...

Related keywords

IXFH50N20 datasheet
IXFH50N20 data sheet
IXFH50N20 pdf datasheet
IXFH50N20 component
IXFH50N20 part
IXFH50N20 distributor
IXFH50N20 RoHS
IXFH50N20 datasheet download