... TIP3055, 2955 Complementary Power Transistors Pin 1. Base 2. Collector 3. Emitter Maximum Ratings Characteristic Collector-Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Base Current Total Power Dissipation 25°C Derate above 25°C Operating and Storage Junction Temperature Range Complementary Silicon Power Transistors are designed for use in general purpose power amplifier and switching applications ...
... TIP3055, 2955 Complementary Power Transistors Thermal Characteristics Characteristic Thermal Resistance Junction to Case Figure - 1 Power Derating T , Temperature (°C) C Electrical Characteristics (T Characteristic OFF Characteristics Collector-Emitter Sustaining Voltage ( 30mA Collector Cut off Current (V = 70V 100Ω Collector Cut off Current (V = 30V Collector Cut off Current ...
... TIP3055, 2955 Complementary Power Transistors Figure - 2 DC Current Gain I , Collector Current (AMP) C Figure - 3 Active Region Safe Operating Area V , Collector Emitter Voltage (Volts) CE Specifications I V C(av) CEO maximum maximum (A) ( There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown safe operating area curves indicate ...
... TIP3055, 2955 Complementary Power Transistors Notes: International Sales Offices: AUSTRALIA – Farnell InOne Tel No 9645 8888 Fax No 9644 7898 AUSTRIA – Farnell InOne Tel No 662 2180 680 Fax No 662 2180 670 BELGIUM – Farnell InOne Tel No 475 2810 Fax No 227 3648 BRAZIL – ...