16TTS12FPPBF Vishay, 16TTS12FPPBF Datasheet - Page 2

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16TTS12FPPBF

Manufacturer Part Number
16TTS12FPPBF
Description
SILICON CONTROLLED RECTIFIER,1.2kV V(DRM),10A I(T),TO-220AB
Manufacturer
Vishay
Datasheet

Specifications of 16TTS12FPPBF

Breakover Current Ibo Max
200 A
Rated Repetitive Off-state Voltage Vdrm
1200 V
Off-state Leakage Current @ Vdrm Idrm
0.5 mA
Forward Voltage Drop
1.4 V
Gate Trigger Voltage (vgt)
2 V
Maximum Gate Peak Inverse Voltage
10 V
Gate Trigger Current (igt)
60 mA
Holding Current (ih Max)
100 mA
Mounting Style
Through Hole
Package / Case
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
16TTS12FPPBF
Manufacturer:
IR
Quantity:
2 000
Company:
Part Number:
16TTS12FPPBF
Quantity:
70 000
16TTS..FPPbF High Voltage Series
Vishay High Power Products
www.vishay.com
2
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
Maximum RMS on-state current
Maximum peak, one-cycle,
non-repetitive surge current
Maximum I
Maximum I
Maximum on-state voltage drop
On-state slope resistance
Threshold voltage
Maximum reverse and direct leakage current
Holding current
Maximum latching current
Maximum rate of rise of off-state voltage
Maximum rate of rise of turned-on current
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
Maximum required DC gate current to trigger
Maximum required DC gate
voltage to trigger
Maximum DC gate voltage not to trigger
Maximum DC gate current not to trigger
SWITCHING
PARAMETER
Typical turn-on time
Typical reverse recovery time
Typical turn-off time
2
2
t for fusing
√t for fusing
For technical questions, contact: diodes-tech@vishay.com
SYMBOL
SYMBOL
SYMBOL
TO-220AB FULL-PAK, 16 A
I
P
V
RM
- V
dV/dt
+ I
I
I
dI/dt
P
I
V
V
V
T(AV)
I
G(AV)
I
RMS
TSM
T(TO)
I
I
2
GT
GD
t
I
I
t
GM
t
2
TM
r
GT
GD
/I
H
gt
√t
L
GM
rr
q
GM
t
t
DM
Phase Control SCR
T
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied
t = 0.1 to 10 ms, no voltage reapplied
10 A, T
T
T
T
Anode supply = 6 V, resistive load, initial I
16TTS08FP, 16TTS12FP
Anode supply = 6 V, resistive load
Anode supply = 6 V, resistive load, T
Anode supply = 6 V, resistive load, T
Anode supply = 6 V, resistive load, T
Anode supply = 6 V, resistive load, T
Anode supply = 6 V, resistive load, T
Anode supply = 6 V, resistive load, T
T
T
T
c
J
J
J
J
J
J
= 95 °C, 180° conduction, half sine wave
= 125 °C
= 25 °C
= 125 °C
= 125 °C, V
= 25 °C
= 125 °C
J
= 25 °C
DRM
V
TEST CONDITIONS
TEST CONDITIONS
R
TEST CONDITIONS
= Rated V
= Rated value
RRM
RRM
RRM
applied
applied
/V
DRM
J
J
J
J
J
J
= - 10 °C
= 25 °C
= 125 °C
= - 10 °C
= 25 °C
= 125 °C
T
= 1 A
Document Number: 94381
TYP. MAX.
VALUES
VALUES
Revision: 26-May-08
-
VALUES
2000
24.0
170
200
144
200
200
500
150
1.4
1.1
0.5
8.0
2.0
1.5
3.0
2.0
1.0
0.2
2.0
10
16
10
10
90
60
35
110
0.9
4
100
UNITS
UNITS
UNITS
A
V/µs
A/µs
A
mA
mA
mA
mA
µs
W
2
A
V
V
A
V
V
2
√s
s

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