16TTS12FPPBF Vishay, 16TTS12FPPBF Datasheet - Page 6

• Manufacturer Part Number: 16TTS12FPPBF
• Description: SILICON CONTROLLED RECTIFIER,1.2kV V(DRM),10A I(T),TO-220AB
• Manufacturer: Vishay

Specifications of 16TTS12FPPBF

• Breakover Current Ibo Max: 200 A
• Rated Repetitive Off-state Voltage Vdrm: 1200 V
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Forward Voltage Drop: 1.4 V
• Gate Trigger Voltage (vgt): 2 V
• Maximum Gate Peak Inverse Voltage: 10 V
• Gate Trigger Current (igt): 60 mA
• Holding Current (ih Max): 100 mA
• Mounting Style: Through Hole
• Package / Case: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

16TTS..FPPbF High Voltage Series
Vishay High Power Products
ORDERING INFORMATION TABLE
www.vishay.com
6
Dimensions
Part marking information
Device code
Note: For higher voltage up to 1600 V contact factory
1
2
3
4
5
6
7
For technical questions, contact: [e-mail]
16
1
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TO-220AB FULL-PAK, 16 A
T
2
LINKS TO RELATED DOCUMENTS
Current rating, RMS value
Circuit configuration:
T = Single thyristor
Package:
T = TO-220AB
Type of silicon:
Voltage code x 100 = V
FULL-PAK
S = Converter grade
None = Standard production
PbF = Lead (Pb)-free
Phase Control SCR
T
3
S
4
12
5
RRM
FP
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http://www.vishay.com/doc?95072
http://www.vishay.com/doc?95069
PbF
08 = 800 V
12 = 1200 V
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Document Number: 94381
Revision: 26-May-08