16TTS12STRLPBF Vishay, 16TTS12STRLPBF Datasheet - Page 5

• Manufacturer Part Number: 16TTS12STRLPBF
• Description: SILICON CONTROLLED RECTIFIER,1.2kV V(DRM),10A I(T),TO-263AB
• Manufacturer: Vishay

Specifications of 16TTS12STRLPBF

• Breakover Current Ibo Max: 200 A
• Rated Repetitive Off-state Voltage Vdrm: 1200 V
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Forward Voltage Drop: 1.4 V
• Gate Trigger Voltage (vgt): 2 V
• Maximum Gate Peak Inverse Voltage: 10 V
• Gate Trigger Current (igt): 60 mA
• Holding Current (ih Max): 100 mA
• Mounting Style: SMD/SMT
• Package / Case: D2PAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 94381
0.01
100
0.1
0.1
10
10
0.0001
0.001
1
1
Rectangular gate pulse
a)Recommended load line for
b)Recommended load line for
VGD
<= 30% rated di/dt: 10 V, 65 ohms
tr = 1 µs, tp >= 6 µs
rated di/dt: 10 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
IGD
0.001
0.01
1000
Fig. 8 - Thermal Impedance Z
100
10
Fig. 7 - On-state Voltage Drop Characteristics
1
0
16TTS.. Series
Instantaneous On-st ate Voltage (V)
Single Pulse
Instantaneous Gate Current (A)
Square Wave Pulse Duration (s)
Fig. 9 - Gate Characteristics
(b)
1
16TTS.. Series
0.01
0.1
2
T = 125°C
T = 25°C
(a)
J
J
3
thJC
0.1
1
Frequency Limited by PG(AV)
Characteristics
4
(1) PGM = 40 , tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
Steady State Value
(DC Operation)
16TTS.. Series
16TTS.. SPbF
(4)
5
10
(3)
1
(2)
Bulletin I2216 09/06
(1)
100
10
www.vishay.com
IR
Series
5