16TTS12STRLPBF Vishay, 16TTS12STRLPBF Datasheet - Page 6

• Manufacturer Part Number: 16TTS12STRLPBF
• Description: SILICON CONTROLLED RECTIFIER,1.2kV V(DRM),10A I(T),TO-263AB
• Manufacturer: Vishay

Specifications of 16TTS12STRLPBF

• Breakover Current Ibo Max: 200 A
• Rated Repetitive Off-state Voltage Vdrm: 1200 V
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Forward Voltage Drop: 1.4 V
• Gate Trigger Voltage (vgt): 2 V
• Maximum Gate Peak Inverse Voltage: 10 V
• Gate Trigger Current (igt): 60 mA
• Holding Current (ih Max): 100 mA
• Mounting Style: SMD/SMT
• Package / Case: D2PAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 94381
16TTS...SPbF SAFE
Bulletin I2216 09/06
Outline Table
Marking Information
1 (K) Cathode
2 (A) Anode
3 (G) Gate
1 (K)
(A)
2
(G) 3
15.49 (0.61)
14.73 (0.58)
3X
1.40 (0.055)
1.14 (0.045)
93°
10.16 (0.40)
(K)
IR
1
REF.
(A)
2
(G)
Series
3
8.89 (0.35)
Dimensions in millimeters and inches
REF.
2X
5.08 (0.20) REF.
2.61 (0.10)
2.32 (0.09)
0.69 (0.27)
0.93 (0.37)
4.57 (0.18)
4.32 (0.17)
0.61 (0.02) MAX.
6.47 (0.25)
6.18 (0.24)
MINIMUM RECOMMENDED FOOTPRINT
8.89 (0.35)
2.08 (0.08)
3.81 (0.15)
2X
4.69 (0.18)
4.20 (0.16)
1.32 (0.05)
1.22 (0.05)
0.55 (0.02)
0.46 (0.02)
11.43 (0.45)
5.28 (0.21)
4.78 (0.19)
2.54 (0.10)
17.78 (0.70)
2X
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