16TTS12STRLPBF Vishay, 16TTS12STRLPBF Datasheet - Page 8

• Manufacturer Part Number: 16TTS12STRLPBF
• Description: SILICON CONTROLLED RECTIFIER,1.2kV V(DRM),10A I(T),TO-263AB
• Manufacturer: Vishay

Specifications of 16TTS12STRLPBF

• Breakover Current Ibo Max: 200 A
• Rated Repetitive Off-state Voltage Vdrm: 1200 V
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Forward Voltage Drop: 1.4 V
• Gate Trigger Voltage (vgt): 2 V
• Maximum Gate Peak Inverse Voltage: 10 V
• Gate Trigger Current (igt): 60 mA
• Holding Current (ih Max): 100 mA
• Mounting Style: SMD/SMT
• Package / Case: D2PAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 94381
Ordering Information Table
16TTS...SPbF SAFE
Bulletin I2216 09/06
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]
Device Code
This product has been designed and qualified for Industrial Level and Lead-Free.
IR
16
1
Series
1
2
3
4
5
6
7
8
T
2
-
-
-
-
-
-
-
-
T
3
Current Rating
Circuit Configuration
T = Single Thyristor
Package
T = TO-220AC
Type of Silicon
S = Standard Recovery Rectifier
Voltage Rating = Voltage Code X 100 = V
S = TO-220 D
TRR = Tape & Reel (Right Oriented)
none = Tube
TRL = Tape & Reel (Left Oriented)
none = Standard Production
PbF = Lead-Free
Data and specifications subject to change without notice.
S
4
Qualification Standards can be found on IR's Web site.
12
5
2
Pak (SMD-220) Version
S
6
TR PbF
7
8
TAC Fax: [phone]
RRM
08 = 800V
12 = 1200V
www.vishay.com
09/06
8