2N5461-E3 Vishay, 2N5461-E3 Datasheet
2N5461-E3
Specifications of 2N5461-E3
Related parts for 2N5461-E3
2N5461-E3 Summary of contents
Page 1
... Lead Temperature ( 40 V Power Dissipation –10 mA –65 to 150_C Notes –55 to 150_C a. Derate 2.8 mW/_C above 25_C 2N/SST5460 Series Vishay Siliconix 2N5460 SST5460 2N5461 SST5461 2N5462 SST5462 D Low-Current, Low-Voltage Amplifiers D High-Side Switching D Ultrahigh Input Impedance Pre-Amplifiers SST5460 (B0)* SST5461 (B1)* SST5462 (B2 *Marking Code for TO-236 ...
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... Series Vishay Siliconix _ Parameter Symbol Static Gate-Source V (BR)GSS Breakdown Voltage Gate-Source Cutoff Voltage V GS(off) b Saturation Drain Current I DSS Gate Reverse Current I GSS Gate Operating Current I G Drain Cutoff Current I D(off) Gate-Source Voltage V GS Gate-Source V GS(F) Forward Voltage Dynamic Common-Source g fs ...
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... V GS 0.2 V –8 0.4 V –6 0.6 V –4 0.8 V –2 1 –16 –20 0 –2 0.6 V –1.6 0.8 V –1.2 –0.8 1.0 V –0.4 1 –0.8 –1 2N/SST5460 Series Vishay Siliconix On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage –100 mA – kHz – Gate-Source Cutoff Voltage (V) GS(off) Output Characteristics ...
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... Series Vishay Siliconix Transfer Characteristics – 1.5 V GS(off) –4 – –55_C A –2 25_C –1 125_C 0 0 0.4 0.8 V – Gate-Source Voltage (V) GS On-Resistance vs. Drain Current 1000 T = 25_C A 800 V = 1.5 V GS(off) 600 3 V 400 200 0 –0.1 –1 I – Drain Current (mA) D Transconductance vs ...
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... Frequency (Hz) Document Number: 70262 S-04030—Rev. D, 04-Jun- 0.1 –1 2 100 k 2N/SST5460 Series Vishay Siliconix Common-Source Forward Transconductance vs. Drain Current GS(off –55_C A 1 25_C 125_C V = – kHz –0.1 –1 I – Drain Current (mA) D Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage MHz – ...