CM75MX-12A Powerex Inc, CM75MX-12A Datasheet - Page 4

• Manufacturer Part Number: CM75MX-12A
• Description: IGBT MODULE NX-SERIES CIB DP 600 75
• Manufacturer: Powerex Inc
• Type: CIB Moduler

Specifications of CM75MX-12A

• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 75A
• Current - Collector (ic) (max): 75A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 7.5nF @ 10V
• Power - Max: 280W
• Input: Three Phase Bridge Rectifier
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: Module
• Prx Availability: RequestQuote
• Voltage: 600V
• Current: 75A
• Circuit Configuration: CIB Module
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: BG2B-5015 - KIT DEV BOARD 2CN 5A FOR IGBTBG2B-3015 - KIT DEV BOARD 2CN 3A FOR IGBTBG2B-1515 - KIT DEV BOARD 1.5A FOR IGBTBG2A-NF - KIT DEV BOARD FOR IGBT
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
CM75MX-12A
NX-Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
75 Amperes/600 Volts
Electrical and Mechanical Characteristics, T
Brake Sector
Characteristics
Collector Cutoff Current
Gate-Emitter Threshold Voltage
Gate Leakage Current
Collector-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Repetitive Reverse Current*
Forward Voltage Drop *
Thermal and Mechanical Characteristics, T
Characteristics
Thermal Resistance, Junction to Case**
Thermal Resistance, Junction to Case**
Contact Thermal Resistance**
Internal Gate Resistance
External Gate Resistance
Converter Sector, T
Characteristics
Repetitive Peak Reverse Current
Forward Voltage Drop
Thermal Resistance, Junction to Case**
Contact Thermal Resistance**
NTC Thermistor Sector, T
Characteristics
Zero Power Resistance
Deviation of Resistance
B Constant
Power Dissipation
*Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
**T
***R1: Resistance at Absolute Temperature T
C
, T
f
measured point is just under the chips.
j
= 25°C unless otherwise specified
j
= 25°C unless otherwise specified
1
(K), R
R
V
R
2
B
V
Symbol
Symbol
R
Symbol
R
R
Symbol
: Resistance at Absolute Temperature T
CE(sat)
R
I
th(j-c)
th(j-c)
I
∆R/R
I
I
C
(25/50)
GE(th)
C
C
RRM
RRM
GES
th(c-f)
th(c-f)
P
CES
Q
th(j-c)
R
V
V
Gint
oes
R
res
ies
25
G
G
F
F
Q
D
j
j
= 25°C unless otherwise specified
= 25°C unless otherwise specified
B = (InR
V
CC
I
C
I
T
C
Thermal Grease Applied
Thermal Grease Applied
= 300V, I
V
C
= 50A, V
I
V
= 50A, V
C
R
V
V
= 100°C, R
CE
1
= 50A, V
CE
GE
= V
– InR
I
Test Conditions
Test Conditions
Test Conditions
F
Test Conditions
= 10V, V
V
T
T
T
Per FWDi
Per FWDi
= V
= 50A, Chip
Per IGBT
RRM
= V
R
I
C
C
C
F
C
GE
I
= V
I
C
GE
2
= 25°C
= 75A
= 25°C
= 25°C
F
CES
GES
= 50A, V
) / (1/T
, T
= 5mA
GE
= 50A
= 15V, T
RRM
= 15V, T
100
GE
j
, V
2
, V
= 150°C
= 15V, Chip
(K), T(K) = t(°C) + 273.15
GE
CE
= 493Ω
= 0V
1
GE
– 1/T
= 0V
= 0V
j
j
= 125°C
= 25°C
= 15V
2
)***
Min.
Min.
Min.
Min.
4.85
–7.3
13
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5
0.015
0.015
3375
5.00
Typ.
Typ.
Typ.
200
Typ.
2.3
2.2
1.7
1.9
1.6
1.2
—
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—
6
0
Max.
Max.
Max.
Max.
0.44
0.85
0.24
5.15
+7.8
125
1.0
0.5
2.1
0.3
1.0
3.2
1.6
7.5
1.0
20
—
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10
7
Rev. 11/08
°C/W
°C/W
°C/W
°C/W
Units
Volts
Volts
Volts
Volts
Volts
Volts
Units
Units
Volts
Units
mW
K/W
mA
mA
mA
nC
µA
nF
nF
nF
kΩ
%
Ω
Ω
K