CM75TX-24S Powerex Inc, CM75TX-24S Datasheet - Page 3

• Manufacturer Part Number: CM75TX-24S
• Description: IGBT MODULE NX-SERIES 6-PAC DP 1200 75
• Manufacturer: Powerex Inc
• Type: 6-PACr

Specifications of CM75TX-24S

• Prx Availability: RequestQuote
• Voltage: 1200V
• Current: 75A
• Circuit Configuration: 6-Pac
• Rohs Compliant: Yes
• Recommended Gate Driver: M57159L
• Recommended Dc To Dc Converter: VLA106-15242

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com
CM75TX-24S
Six IGBTMOD™ NX-S Series Module
75 Amperes/1200 Volts
12/11 Rev. 3
Electrical Characteristics, T
Inverter Part IGBT/FWDi
Characteristics
Collector-Emitter Cutoff Current
Gate-Emitter Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Emitter-Collector Voltage
Emitter-Collector Voltage
Reverse Recovery Time
Reverse Recovery Charge
Internal Lead Resistance
Internal Gate Resistance
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
*2 Case temperature (T
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
diode (FWDi).
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
C
) and heatsink temperature (T
j
= 25°C unless otherwise specified
s
) is measured on the surface
R
(Terminal)
(Terminal)
V
V
V
CC' + EE'
Symbol
(Chip)
(Chip)
V
V
CE(sat)
CE(sat)
t
t
I
I
C
Q
GE(th)
C
C
d(on)
d(off)
CES
GES
t
Q
EC
EC
rr
r
oes
res
t
t
rr
ies
g
r
G
f
*1
*1
*1
*1
V
V
V
CC
I
I
CC
E
E
CC
I
I
I
I
C
C
C
C
I
I
I
I
I
E
= 75A, V
I
E
= 75A, V
C
C
R
R
E
E
= 600V, I
= 600V, I
= 75A, V
= 75A, V
= 75A, V
= 75A, V
= 600V, I
G
= 75A, V
= 75A, V
G
Per Switch,T
= 75A, V
= 75A, V
= 75A, V
= 75A, V
V
Main Terminals-Chip,
V
V
= 8.2Ω, Inductive Load
= 8.2Ω, Inductive Load
I
CE
C
CE
GE
= 7.5mA, V
= 10V, V
Test Conditions
Per Switch
GE
GE
= V
= V
C
GE
GE
GE
GE
E
C
GE
GE
GE
GE
GE
GE
= 75A, V
= 75A, V
CES
= 0V, T
= 0V, T
GES
= 75A, V
= 15V, T
= 15V, T
= 15V, T
= 15V, T
= 0V, T
= 0V, T
= 15V, T
= 15V, T
C
= 0V, T
= 0V, T
GE
, V
, V
= 25°C
CE
GE
CE
j
j
= 0V
= 150°C
= 150°C
GE
GE
= 10V
GE
j
j
j
j
j
j
j
j
= 125°C
= 125°C
= 0V
= 0V
j
j
19.9
28.4
= 125°C
= 150°C
= 125°C
= 150°C
= 25°C
= 25°C
= 25°C
= 25°C
*2
= ±15V,
= ±15V
0
= 15V
Each mark points to the center position of each chip.
Tr*P / Tr*N: IGBT
*5
*5
54
55
56
57
58
59
60
61
*5
*5
*5
*5
*5
*5
*5
*5
*5
*5
53
UP
UP
Di
Tr
1
52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31
2
3
UN
UN
Di
Tr
4 5
Min.
Di*P / Di*N: FWDi
5.4
6
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
7
8
VP
VP
Di
Tr
9 10 11 12 13 14 15 16 17 18 19 20 21 22
VN
VN
Di
Tr
2.00
2.05
1.80
1.70
1.90
1.95
1.80
1.80
1.80
1.70
1.70
1.70
175
Typ.
4.0
—
—
—
—
—
—
—
—
—
—
—
6
0
WP
WP
Di
Tr
Th: NTC Thermistor
WN
WN
Di
Tr
Th
Max.
2.25
2.15
0.13
2.25
2.15
300
200
600
300
300
0.5
6.6
2.4
1.5
7.5
—
—
—
—
—
—
—
—
—
—
—
LABEL SIDE
1
30
29
28
27
26
25
24
23
0
21.6
24.1
30.0
Units
Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts
mA
mΩ
nC
µC
µA
nF
nF
nF
ns
ns
ns
ns
ns
Ω
3