CM800HA-24H

Manufacturer Part NumberCM800HA-24H
DescriptionTRANSISTOR,IGBT POWER MODULE,INDEPENDENT,1.2kV V(BR)CES,800A I(C)
ManufacturerPowerex Inc
SeriesIGBTMOD™
CM800HA-24H datasheet
 

Specifications of CM800HA-24H

ConfigurationSingleVoltage - Collector Emitter Breakdown (max)1200V
Vce(on) (max) @ Vge, Ic3.6V @ 15V, 800ACurrent - Collector (ic) (max)800A
Current - Collector Cutoff (max)5mAInput Capacitance (cies) @ Vce180nF @ 10V
Power - Max4800WInputStandard
Ntc ThermistorNoMounting TypeChassis Mount
Package / CaseModuleLead Free Status / RoHS StatusContains lead / RoHS non-compliant
Igbt Type-  
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Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM800HA-24H
Single IGBTMOD™ H-Series Module
800 Amperes/1200 Volts
Absolute Maximum Ratings, T
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage
Collector Current
Peak Collector Current
Diode Forward Current
Diode Forward Surge Current
Power Dissipation
Max. Mounting Torque M8 Terminal Screws
Max. Mounting Torque M6 Mounting Screws
Max. Mounting Torque M4 G-E Terminal Screws
Module Weight (Typical)
V Isolation
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
Static Electrical Characteristics, T
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Diode Forward Voltage
* Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, T
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Turn-on Delay Time
Load
Rise Time
Switching
Turn-off Delay Time
Times
Fall Time
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Thermal and Mechanical Characteristics, T
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
198
= 25 C unless otherwise specified
j
= 25 C unless otherwise specified
j
Symbol
Test Conditions
I
V
= V
, V
CES
CE
CES
GE
I
V
= V
, V
GES
GE
GES
CE
V
I
= 80mA, V
GE(th)
C
CE
V
I
= 800A, V
CE(sat)
C
GE
I
= 800A, V
= 15V, T
C
GE
Q
V
= 600V, I
= 800A, V
G
CC
C
V
I
= 800A, V
FM
E
GS
= 25 C unless otherwise specified
j
Symbol
Test Conditions
C
ies
C
V
= 0V, V
= 10V, f = 1MHz
oes
GE
CE
C
res
t
d(on)
t
V
= 600V, I
= 800A,
r
CC
C
t
V
= V
= 15V, R
d(off)
GE1
GE2
t
f
t
I
= 800A, di
/dt = –1600A/ s
rr
E
E
Q
I
= 800A, di
/dt = –1600A/ s
rr
E
E
= 25 C unless otherwise specified
j
Symbol
Test Conditions
R
Per IGBT
th(j-c)
R
Per FWDi
th(j-c)
R
Per Module, Thermal Grease Applied
th(c-f)
Symbol
CM800HA-24H
T
–40 to +150
j
T
–40 to +125
stg
V
1200
CES
V
20
GES
I
800
C
I
1600*
CM
I
800
F
I
1600*
FM
P
4800
d
95
26
13
1600
V
2500
RMS
Min.
Typ.
Max.
= 0V
5.0
= 0V
0.5
= 10V
4.5
6.0
7.5
= 15V
2.7
3.6
= 150 C
2.4
j
= 15V
4500
GS
= 0V
3.5
Min.
Typ.
Max.
180
64
36
500
1200
= 4.2
1000
G
350
250
5.9
Min.
Typ.
Max.
0.026
0.058
0.018
Units
C
C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
in-lb
Grams
Volts
Units
mA
A
Volts
Volts
Volts
nC
Volts
Units
nF
nF
nF
ns
ns
ns
ns
ns
C
Units
C/W
C/W
C/W