FDS8935 Fairchild Semiconductor, FDS8935 Datasheet
FDS8935
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FDS8935 Summary of contents
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... Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDS8935 FDS8935 ©2010 Fairchild Semiconductor Corporation FDS8935 Rev.C ® MOSFET General Description = -2.1 A This P-channel MOSFET is produced using Fairchild D Semiconductor’s advanced PowerTrench® process that has = -1.9 A ...
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... Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%. 3. Starting ° 3 ©2010 Fairchild Semiconductor Corporation FDS8935 Rev 25°C unless otherwise noted J Test Conditions = -250 μ -250 μA, referenced to 25 °C ...
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... Figure 3. Normalized On- Resistance vs Junction Temperature 10 μ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 - GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDS8935 Rev °C unless otherwise noted J μ 800 600 400 200 50 75 100 125 150 0.001 3.0 V ...
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... THIS AREA IS LIMITED BY r DS(on) 0.1 SINGLE PULSE MAX RATED o C 135 θ 0. 0.005 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2010 Fairchild Semiconductor Corporation FDS8935 Rev °C unless otherwise noted J 1000 = -20 V 100 2 100 ...
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... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 - Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDS8935 Rev °C unless otherwise noted J SINGLE PULSE 135 C/W θ RECTANGULAR PULSE DURATION (sec NOTES: DUTY FACTOR ...
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... Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2010 Fairchild Semiconductor Corporation FDS8935 Rev.C F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ...