HFA08TB120STRRP Vishay, HFA08TB120STRRP Datasheet

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HFA08TB120STRRP

Manufacturer Part Number
HFA08TB120STRRP
Description
1200V8AHEXFREDDiscreteDiodeinaD2-Pak(HEXFRED)
Manufacturer
Vishay
Datasheet

Specifications of HFA08TB120STRRP

Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
1200 V
Forward Voltage Drop
3.3 V
Recovery Time
95 ns
Forward Continuous Current
8 A
Max Surge Current
130 A
Reverse Current Ir
10 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Package / Case
D2PAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Document Number: 94046
Revision: 22-Feb-10
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
Maximum repetitive forward current
Maximum power dissipation
Operating junction and storage temperature range
dI
(rec)M
V
F
/dt (typical) at 125 °C
T
I
at 8 A at 25 °C
RRM
J
Q
t
rr
(maximum)
rr
(typical)
I
(typical)
F(AV)
V
(typical)
R
D
2
PAK
Ultrafast Soft Recovery Diode, 8 A
N/C
1
For technical questions, contact:
catho e
Base
85 A/μs
140 nC
1200 V
150 °C
2
28 ns
3.3 V
4.5 A
Ano e
8 A
3
SYMBOL
T
HEXFRED
J
I
I
FSM
FRM
, T
V
P
I
F
R
D
Stg
T
T
T
C
C
C
TEST CONDITIONS
= 100 °C
= 25 °C
= 100 °C
FEATURES
• Ultrafast recovery
• Ultrasoft recovery
• Very low I
• Very low Q
• Specified at operating conditions
• Meets MSL level 1, per J-STD-020, LF maximum
• Halogen-free according to IEC 61249-2-21
• Compliant to RoHS directive 2002/95/EC
• AEC-Q101 qualified
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
VS-HFA08TB120S is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction and
advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 1200 V and 8 A continuous current, the
VS-HFA08TB120S is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED
extremely low values of peak recovery current (I
does not exhibit any tendency to “snap-off” during the t
portion of recovery. The HEXFRED features combine to offer
designers a rectifier with lower noise and significantly lower
switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED VS-HFA08TB120S is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
diodestech@vishay.com
peak of 260 °C
definition
®
RRM
rr
Vishay High Power Products
VS-HFA08TB120SPbF
- 55 to + 150
VALUES
1200
73.5
130
32
29
8
®
product line features
www.vishay.com
UNITS
°C
W
V
A
RRM
) and
1
b

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HFA08TB120STRRP Summary of contents

Page 1

... SYMBOL TEST CONDITIONS 100 ° FSM I FRM ° 100 ° Stg For technical questions, contact: diodestech@vishay.com VS-HFA08TB120SPbF Vishay High Power Products RRM rr ® product line features VALUES UNITS 1200 8 130 32 73 150 °C www.vishay.com ) and RRM ...

Page 2

... VS-HFA08TB120SPbF Vishay High Power Products ELECTRICAL SPECIFICATIONS (T PARAMETER SYMBOL Cathode to anode V BR breakdown voltage Maximum forward voltage V FM Maximum reverse I RM leakage current Junction capacitance C Series inductance L S DYNAMIC RECOVERY CHARACTERISTICS (T PARAMETER SYMBOL t rr Reverse recovery time t rr1 t rr2 I RRM1 Peak recovery current ...

Page 3

... V - Reverse Voltage (V) R Fig Typical Junction Capacitance vs. Reverse Voltage 0.01 0.001 0. Rectangular Pulse Duration (s) 1 thJC For technical questions, contact: diodestech@vishay.com VS-HFA08TB120SPbF Vishay High Power Products T = 150 ° 125 ° 100 ° ° 300 600 900 V - Reverse Voltage (V) ...

Page 4

... VS-HFA08TB120SPbF Vishay High Power Products 160 V = 160 125 °C 140 °C J 120 100 100 (A/μs) 94046_05 F Fig Typical Reverse Recovery Time vs 160 125 ° ° 100 dI /dt (A/µs) 94046_06 F Fig Typical Recovery Current vs. dI www.vishay.com 4 HEXFRED Ultrafast Soft Recovery Diode 1200 ...

Page 5

... I RRM (5) dI /dt - peak rate of change of (rec)M current during t to point where a line passing and 0.50 I RRM RRM Fig Reverse Recovery Waveform and Definitions For technical questions, contact: diodestech@vishay.com VS-HFA08TB120SPbF Vishay High Power Products b ( 0.5 I RRM (5) dI /dt (rec)M RRM ...

Page 6

... VS-HFA08TB120SPbF Vishay High Power Products ORDERING INFORMATION TABLE Device code VS Dimensions Part marking information Packaging information www.vishay.com 6 HEXFRED Ultrafast Soft Recovery Diode 120 HPP product suffix ® HEXFRED family Process designator Electron irradiated Current rating ( Package outline (TB = TO-220, 2 leads) Voltage rating ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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