HFA80FA120P Vishay, HFA80FA120P Datasheet

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HFA80FA120P

Manufacturer Part Number
HFA80FA120P
Description
Array Of Independent Diodes,SOT-227B
Manufacturer
Vishay
Datasheet

Specifications of HFA80FA120P

Product
Ultra Fast Recovery Rectifier
Configuration
Dual Parallel
Reverse Voltage
1200 V
Forward Voltage Drop
3.3 V
Recovery Time
52 ns
Forward Continuous Current
40 A
Max Surge Current
400 A
Reverse Current Ir
2 uA
Mounting Style
Screw
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Package / Case
SOT-227
Repetitive Reverse Voltage Vrrm Max
1.2kV
Leaded Process Compatible
No
Thermal Resistance, Junction-case
0.35K/W
Forward Voltage
3V
Leakage Current
2µA
Current Rating
80A
Rohs Compliant
Yes
Diode Type
Ultrafast Recovery
Forward Current If(av)
40A
Forward Voltage Vf Max
2.6V
Reverse Recovery Time Trr Max
25ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Document Number: 94075
Revision: 22-Jul-10
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Continuous forward current
Single pulse forward current
Maximum repetitive forward current
Maximum power dissipation
RMS isolation voltage
Operating junction and storage
temperature range
ELECTRICAL SPECIFICATIONS (T
PARAMETER
Cathode to anode
breakdown voltage
Forward voltage
Reverse leakage current
Junction capacitance
V
I
t
F(DC)
rr
F
(typical)
(typical)
V
R
at T
C
SOT-227
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
For technical questions within your region, please contact one of the following:
Ultrafast Soft Recovery Diode, 80 A
SYMBOL
V
V
I
C
RM
FM
BR
T
40 A at 78 °C
1200 V
25 ns
2.6 V
J
I
I
I
I
V
T
V
R
F
F
F
SYMBOL
R
J
R
= 25 °C unless otherwise specified)
T
= 25 A
= 40 A
= 80 A, T
= 100 μA
= 125 °C, V
V
= V
= 200 V
J
I
I
FSM
FRM
, T
V
P
ISOL
I
F
R
D
R
Stg
rated
HEXFRED
J
TEST CONDITIONS
= 125 °C
R
T
T
Rated V
T
T
Any terminal to case, t = 1 min
= 0.8 x V
C
J
C
C
= 25 °C
= 78 °C
= 25 °C
= 100 °C
R,
R
FEATURES
• Fast recovery time characteristic
• Electrically isolated base plate
• Large creepage distance between terminal
• Simplified mechanical designs, rapid assembly
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION/APPLICATIONS
The dual diode series configuration (HFA80FA120P) is used
for output rectification or freewheeling/clamping operation
and high voltage application.
The semiconductor in the SOT-227 package is isolated from
the copper base plate, allowing for common heatsinks and
compact assemblies to be built.
These modules are intended for general applications such
as HV power supplies, electronic welders, motor control and
inverters.
square wave, 20 kHz, T
TEST CONDITIONS
rated
®
DiodesEurope@vishay.com
See fig. 1
See fig. 2
See fig. 3
C
= 60 °C
Vishay Semiconductors
MIN.
1200
-
-
-
-
-
-
- 55 to + 150
HFA80FA120P
TYP.
2.6
2.9
3.4
2.0
0.5
43
-
MAX.
1200
2500
400
178
40
72
71
MAX.
3.0
3.3
2
-
-
-
-
www.vishay.com
UNITS
°C
W
A
V
V
UNITS
mA
μA
pF
V
1

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HFA80FA120P Summary of contents

Page 1

... UL approved file E78996 • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level DESCRIPTION/APPLICATIONS The dual diode series configuration (HFA80FA120P) is used for output rectification or freewheeling/clamping operation 1200 V and high voltage application. The semiconductor in the SOT-227 package is isolated from 2 ...

Page 2

... HFA80FA120P Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T PARAMETER SYMBOL Reverse recovery time t rr Peak recovery current I RRM Reverse recovery charge Q THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Junction to case, single leg conducting Junction to case, both legs conducting Case to heatsink Weight Mounting torque www.vishay.com For technical questions within your region, please contact one of the following: 2 DiodesAmericas@vishay ...

Page 3

... V - Reverse Voltage (V) R Fig Typical Junction Capacitance vs. Reverse Voltage 0.02 Single pulse D = 0.01 0.001 0. Rectangular Pulse Duration (s) 1 Fig Maximum Thermal Impedance Z HFA80FA120P Vishay Semiconductors T = 150 ° 125 ° ° 200 400 600 800 1000 V - Reverse Voltage (V) R Fig ...

Page 4

... HFA80FA120P Vishay Semiconductors DC Square wave (D = 0.50) See note ( Average Forward Current (A) F(AV) Fig Maximum Allowable Case Temperature vs. Average Forward Current Average Forward Current (A) F(AV) Fig Forward Power Loss Characteristics Note (1) Formula used ( REV Pd = Forward power loss = F(AV Inverse power loss = D); I REV ...

Page 5

... I RRM 0. /dt ( area under curve defined and I RRM (5) dI /dt - peak rate of change of (rec)M current during t to point where a line passing and 0.50 I RRM RRM Fig Reverse Recovery Waveform and Definitions HFA80FA120P Vishay Semiconductors ( 0.5 I RRM (5) dI /dt (rec)M RRM RRM portion of t ...

Page 6

... HFA80FA120P Vishay Semiconductors ORDERING INFORMATION TABLE Device code CIRCUIT CONFIGURATION Dimensions Packaging information www.vishay.com For technical questions within your region, please contact one of the following: 6 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, ® HEXFRED Ultrafast Soft Recovery Diode 120 ® HEXFRED family 2 - Process designator (A = Electron irradiated) ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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