IRCZ24 Vishay, IRCZ24 Datasheet

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IRCZ24

Manufacturer Part Number
IRCZ24
Description
MOSFET
Manufacturer
Vishay
Series
HEXFET®r
Datasheet

Specifications of IRCZ24

Transistor Polarity
N Channel
Continuous Drain Current Id
26A
Power Dissipation Pd
60W
Thermal Resistance
2.5°C/W
Gate-to-drain Charge
9nC
Mounting Type
Through Hole
Peak Reflow Compatible (260 C)
No
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Current Sensing
Rds On (max) @ Id, Vgs
100 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
17A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
24nC @ 10V
Input Capacitance (ciss) @ Vds
720pF @ 25V
Power - Max
60W
Package / Case
TO-220-5 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRCZ24
Manufacturer:
IR
Quantity:
5 000
Part Number:
IRCZ24
Manufacturer:
IR
Quantity:
20 000
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HEXFET
Description
** When mounted on FR-4 board using minimum recommended footprint. For recommended footprint and soldering techniques refer to application note #AN-994.
Third Generation HEXFETs from International Rectifier provide the designer with
the best combination of fast switching, ruggedized device, low on-resistance and
cost-effectiveness.
The HEXSence device provides an accurate fraction of the drain current through
the additional two leads to be used for control or protection of the device. These
devices exhibit similar electrical and thermal characteristics as their IRF-series
equivalent part numbers. The provision of a kelvin source connection effectively
eliminates problems of common source inductance when the HEXSence is
used as a fast, high-current switch in non current-sensing applications.
Absolute Maximum Ratings
Thermal Resistance
I
I
I
P
V
E
dv/dt
T
T
R
R
R
D
D
DM
J
AS
STG
D
GS
JA
@ T
@ T
JC
CS
Dynamic dv/dt Rating
Current Sense
175°C Operating Temperature
Fast Switching
Ease of Paralleling
Simple Drive Requirements
@T
C
C
C
= 25°C
= 100°C
= 25°C
®
Power MOSFET
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ‚
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Mounting Torque, 6-32 or screw
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Continuous Drain Current, V
Soldering Temperature, for 10 seconds
Parameter
Parameter
GS
GS
@ 10V
@ 10V
Min.
300 (1.6mm from case)
Max.
0.50
10 lbf•in (1.1 N•m)
-55 to + 175
Max.
0.40
±20
6.0
4.5
17
12
68
60
Units
R
2.5
62
TO-220 HexSense
DS(on)
IRCZ24
V
DSS
I
D
= 26A
= 0.040
PD - 9.615A
= 55V
Units
°C/W
W/°C
mJ
°C
W
A
V
A
C-1

Related parts for IRCZ24

IRCZ24 Summary of contents

Page 1

... Case-to-Sink, Flat, Greased Surface CS R Junction-to-Ambient JA ** When mounted on FR-4 board using minimum recommended footprint. For recommended footprint and soldering techniques refer to application note #AN-994. Parameter @ 10V GS @ 10V GS Parameter Min. — — — 9.615A IRCZ24 V = 55V DSS R = 0.040 DS(on 26A D TO-220 HexSense Max. Units 0.40 ± ...

Page 2

... IRCZ24 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...

Page 3

... V , Drain-to-Source Voltage (Volts) DS Fig. 1 Typical Output Characteristics, T =25° Gate-to-Source Voltage (Volts) DS Fig. 3 Typical Transfer Characteristics V , Drain-to-Source Voltage (Volts) DS Fig. 2 Typical Output Characteristics, T =175° Junction Temperature (°C) J Fig. 4 Normalized On-Resistance vs. Temperature IRCZ24 C-3 ...

Page 4

... IRCZ24 V , Drain-to-Source Voltage (Volts) DS Fig. 5 Typical Capacitance vs. Drain-to- Source Voltage V , Source-to-Drain Voltage (Volts) SD Fig. 7 Typical Source-Drain Diode Forward Voltage C Total Gate Charge (nC) G Fig. 6 Typical Gate Charge vs. Gate-to- Source Voltage V , Drain-to-Source Voltage (Volts) DS Fig. 8 Maximum Safe Operating Area ...

Page 5

... T , Case Temperature (°C) C Fig. 9 Maximum Drain Current vs. Case Temperature Fig. 11 Maximum Effective Transient Thermal Impedance, Junction-to-Case t , Rectiangular Pulse Duration (seconds) 1 Starting T , Junction Temperature (°C) J Fig. 12c Maximum Avalanche Energy vs. Drain Current IRCZ24 C-5 ...

Page 6

... IRCZ24 T , Junction Temperature (°C) J Fig. 15 Typical HEXSense Ratio vs. Junction Temperature V , Gate-to-Source Voltage (Volts) GS Fig. 17 Typical HEXSense Ratio vs. Gate Voltage Mechanical drawings, Appendix A Part marking information, Appendix B Test Circuit diagrams, Appendix C C Drain Current (Amps) D Fig. 16 Typical HEXSense Ratio vs. Drain Current Fig. 18 HEXSense Ratio Test Circuit Fig ...

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