IRF420 International Rectifier, IRF420 Datasheet

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IRF420

Manufacturer Part Number
IRF420
Description
TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,2.5A I(D),TO-204AA
Manufacturer
International Rectifier
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF420
Manufacturer:
IR
Quantity:
12 500
REPETITIVE A V ALANCHE AND dv/dt RATED
HEXFET TRANSISTORS
THRU-HOLE (TO-204AA/AE)
Product Summary
The HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of paralleling and temperature
stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, au-
dio amplifiers and high energy pulse circuits.
For footnotes refer to the last page
Absolute Maximum Ratings
I D @ V GS = 0V, T C = 25°C
I D @ V GS = 0V, T C = 100°C
www.irf.com
Part Number
IRF340
P D @ T C = 25°C
T STG
dv/dt
I DM
E AR
E AS
V GS
I AR
T J
BVDSS R
400V
0.55
DS(on)
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
I
D
A
300 (0.063 in. (1.6mm) from case for 10s)
Features:
n
n
n
n
n
Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling
11.5(typical)
-55 to 150
400V, N-CHANNEL
125
±20
6.0
1.0
5.7
4.0
1 0
4 0
1 0
-
TO-3
IRF340
PD - 90371
01/24/01
Units
W/°C
V/ns
o
mJ
mJ
W
A
A
V
g
C
1

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