IRF540N

Manufacturer Part NumberIRF540N
DescriptionFairchild Sample
ManufacturerFairchild Semiconductor
IRF540N datasheet
 
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Data Sheet
33A, 100V, 0.040 Ohm, N-Channel, Power
MOSFET
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
DRAIN
(FLANGE)
IRF540N
Symbol
D
G
S
Absolute Maximum Ratings
T
= 25
C
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
= 20k Ω ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (R
GS
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain Current
o
Continuous (T
= 25
C, V
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
GS
o
Continuous (T
= 100
C, V
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
GS
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
o
Derate Above 25
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
NOTES:
o
o
1. T
= 25
C to 150
C.
J
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2002 Fairchild Semiconductor Corporation
January 2002
Features
• Ultra Low On-Resistance
- r
DS(ON)
• Simulation Models
GATE
- Temperature Compensated PSPICE™ and SABER
Electrical Models
- Spice and SABER
- www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Ordering Information
PART NUMBER
IRF540N
o
C, Unless Otherwise Specified
DSS
DGR
DM
, T
J
STG
pkg
IRF540N
= 0.040 Ω,
= 10V
V
GS
©
Thermal Impedance Models
PACKAGE
BRAND
TO-220AB
IRF540N
IRF540N
100
100
± 20
GS
33
D
23
D
Figure 4
Figures 6, 14, 15
120
D
0.80
-55 to 175
300
L
260
©
UNITS
V
V
V
A
A
W
o
W/
C
o
C
o
C
o
C
IRF540N Rev. C