IRFIB8N50K Vishay, IRFIB8N50K Datasheet
IRFIB8N50K
Specifications of IRFIB8N50K
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IRFIB8N50K Summary of contents
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... DSS 500V @ 10V GS @ 10V GS 300 (1.6mm from case ) Typ. ––– c ––– c ––– Typ. ––– ––– IRFIB8N50K ® HEXFET Power MOSFET R typ. I DS(on) D 290mΩ 6.7A TO-220 FULL-PAK Max. Units 6.7 4.2 ...
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Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS I Gate-to-Source ...
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VGS TOP 15V 12V 100 10V 8.0V 7.0V 6.0V 10 5.5V BOTTOM 5.0V 1 0.1 0.01 20µs PULSE WIDTH Tj = 25°C 0.001 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100. ...
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0V MHZ C iss = SHORTED C rss = C gd 10000 C oss = iss 1000 C oss ...
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T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE ...
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Starting Junction Temperature (°C) Fig 12a. Maximum Avalanche Energy Vs. Drain Current Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µF D.U. ...
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D.U.T + ‚ - Driver Gate Drive P.W. D.U. Reverse Recovery Current D.U. Re-Applied Voltage Inductor Curent Fig 14. For N-Channel HEXFET www.irf.com + • • ƒ • - „ - • • • • ...
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TO-220 Full-Pak Package Outline Dimensions are shown in millimeters (inches) 10.60 (.417) 10.40 (.409) 16.00 (.630) 15.80 (.622 13.70 (.540) 13.50 (.530) 1.40 (.055) 3X 1.05 (.042) 2.54 (.100) 2X TO-220 Full-Pak Part Marking Information TO-22O Full-Pak package ...