MAT01GH Analog Devices Inc, MAT01GH Datasheet
MAT01GH
Specifications of MAT01GH
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MAT01GH Summary of contents
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PRODUCT DESCRIPTION The MAT01 is a monolithic dual NPN transistor. An exclusive Silicon Nitride “Triple-Passivation” process provides excellent stability of critical parameters over both temperature and time. Matching characteristics include offset voltage of 40 µV, tem- perature drift of ...
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... C, unless otherwise noted.) A MAT01GH Typ Max Min Typ Min 0.06 0.15 0.14 0.70 0.15 0.50 0.35 1.8 0.9 8.0 1.5 15 150 28 60 ...
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TYPICAL ELECTRICAL CHARACTERISTICS Parameter Symbol Average Offset Voltage Drift TCV Average Offset Current Drift TCI Collector-Emitter-Leakage Current I CES Collector-Base-Leakage Current I CBO Gain Bandwidth Product f T ∆V Offset Voltage Stability NOTES 1 Exclude first hour of operation to ...
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... Ambient Temperature ≤ 70° 500 mW Operating Ambient Temperature . . . . . . . . . –55°C to +125°C Operating Junction Temperature . . . . . . . . . –55°C to +150°C Model MAT01AH MAT01GH NOTES 1 Burn-in is available on commercial and industrial temperature range parts in TO-can packages. 2 For devices processed in total compliance to MIL-STD-883, add/883 after part number ...
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Typical Performance Characteristics–MAT01 ...
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MAT01 MAT01 TEST CIRCUITS ...
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APPLICATION NOTES Application of reverse bias voltages to the emitter-base junctions in excess of ratings (5 V) may result in degradation matching characteristics. Circuit designs should be checked FE to ensure that reverse bias voltages above 5 ...
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MAT01 0.040 (1.02) MAX Revision History Location Data Sheet changed from REV REV. B. Edits to FEATURES . . . . . . . . . . . . . . . . . . . . . ...