MAT03EH Analog Devices Inc, MAT03EH Datasheet

TRANSISTOR,BJT,PAIR,PNP,36V V(BR)CEO,20MA I(C),TO-78

MAT03EH

Manufacturer Part Number

MAT03EH

Description

TRANSISTOR,BJT,PAIR,PNP,36V V(BR)CEO,20MA I(C),TO-78

Manufacturer

Analog Devices Inc

Datasheet

1.MAT03FHZ.pdf (12 pages)

Specifications of MAT03EH

Rohs Status

RoHS non-compliant

Transistor Type

2 PNP (Dual)

Current - Collector (ic) (max)

20mA

Voltage - Collector Emitter Breakdown (max)

36V

Vce Saturation (max) @ Ib, Ic

100mV @ 100µA, 1mA

Power - Max

500mW

Frequency - Transition

190MHz

Mounting Type

Through Hole

Package / Case

TO-78-6 Metal Can

Current - Collector Cutoff (max)

Dc Current Gain (hfe) (min) @ Ic, Vce

Lead Free Status / RoHS Status

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MAT03EHZ

Manufacturer:

Analog Devices Inc

Quantity:

135

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GENERAL DESCRIPTION

The MAT03 dual monolithic PNP transistor offers excellent

parametric matching and high frequency performance. Low

noise characteristics (1 nV/

(190 MHz typical), and low offset voltage (100 µV max), makes

the MAT03 an excellent choice for demanding preamplifier appli-

cations. Tight current gain matching (3% max mismatch) and

high current gain (100 min), over a wide range of collector cur-

rent, makes the MAT03 an excellent choice for current mirrors.

A low value of bulk resistance (typically 0.3 Ω) also makes the

MAT03 an ideal component for applications requiring accurate

logarithmic conformance.

√Hz

√ Hz max @ 1 kHz), high bandwidth

Each transistor is individually tested to data sheet specifications.

Device performance is guaranteed at 25°C and over the extended

industrial and military temperature ranges. To ensure the long-

term stability of the matching parameters, internal protection

diodes across the base-emitter junction clamp any reverse base-

emitter junction potential. This prevents a base-emitter breakdown

condition that can result in degradation of gain and matching

performance due to excessive breakdown current.

PIN CONNECTION

Low Noise, Matched

Dual PNP Transistor

(H Suffix)

TO-78

MAT03

Related parts for MAT03EH

MAT03EH Summary of contents

Page 1

GENERAL DESCRIPTION The MAT03 dual monolithic PNP transistor offers excellent parametric matching and high frequency performance. Low √ Hz max @ 1 kHz), high bandwidth noise characteristics (1 nV/ (190 MHz typical), and low offset voltage (100 µV ...

Page 2

MAT03–SPECIFICATIONS ELECTRICAL CHARACTERISTICS Parameter Symbol 1 Current Gain Current Gain Matching Offset Voltage V OS ∆V Offset Voltage Change /∆ vs. Collector Voltage ∆V Offset Voltage Change /∆ vs. Collector ...

Page 3

... Temperature OS Model (T = +25 C) Range A 100 µV MAT03EH –40°C to +85°C 200 µV MAT03FH –40°C to +85°C CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. ...

Page 4

MAT03 –Typical Performance Characteristics ...

Page 5

MAT03 ...

Page 6

MAT03 APPLICATIONS INFORMATION MAT03 MODELS The MAT03 model (Figure 1) includes parasitic diodes D through and D are internal protection diodes that prevent zenering of the base-emitter junctions. The analysis programs, SPICE and SABER, ...

Page 7

The 5 kΩ collector resistors noise contribution is insignificant compared to the volt- age noise of the MAT03. Since noise in the signal path is referred back to the input, this voltage ...

Page 8

MAT03 This amplifier exhibits excellent full power ac performance, 0.08% THD into a 600 Ω load, making it suitable for exacting audio applications (see Figure 3b). LOW NOISE MICROPHONE PREAMPLIFIER Figure 4 shows a microphone preamplifier that consists of a ...

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MAT03EH Analog Devices Inc, MAT03EH Datasheet

MAT03EH

Specifications of MAT03EH

Available stocks

Related parts for MAT03EH

MAT03EH Summary of contents

Page 1

Page 2

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