S25B GeneSiC Semiconductor, S25B Datasheet

Standard Recovery - 100 V - 25 A - DO-4

S25B

Manufacturer Part Number
S25B
Description
Standard Recovery - 100 V - 25 A - DO-4
Manufacturer
GeneSiC Semiconductor
Datasheet

Specifications of S25B

Product
Standard Recovery Rectifier
Reverse Voltage
100 V
Forward Voltage Drop
1.1 V
Forward Continuous Current
25 A
Max Surge Current
373 A
Reverse Current Ir
10 uA
Mounting Style
Through Hole
Package / Case
DO-4
Lead Free Status / Rohs Status
 Details

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Features
• High Surge Capability
• Types up to 1200 V V
Maximum ratings, at T
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, Half Sine Wave
Operating temperature
Storage temperature
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Diode forward voltage
Reverse current
Thermal characteristics
Thermal resistance, junction -
case
Silicon Standard
Recovery Diode
p
Parameter
p
RRM
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
g
Symbol
Symbol
V
V
R
I
V
T
F,SM
V
RRM
RMS
I
T
I
thJC
DC
stg
F
R
F
j
T
V
V
C
I
R
F
R
= 25 °C, t
= 50 V, T
= 25 A, T
= 50 V, T
Conditions
T
Conditions
C
≤ 120 °C
p
j
j
j
= 25 °C
= 175 °C
= 8.3 ms
= 25 °C
1
-65 to 175
-65 to 200
S25B (R)
S25B (R)
2.50
100
100
373
1.1
70
25
10
12
-65 to 175
-65 to 200
S25D (R)
S25D (R)
2.50
200
140
200
373
1.1
25
10
12
S25B thru S25JR
-65 to 175
-65 to 200
S25G (R)
S25G (R)
DO-4 Package
2.50
400
280
400
373
1.1
25
10
12
V
I
F
RRM
=25 A
= 50 V - 1200 V
-65 to 175
-65 to 200
S25J (R)
S25J (R)
2.50
600
420
600
373
1.1
25
10
12
°C/W
Unit
Unit
mA
μA
°C
°C
V
V
V
A
A
V

Related parts for S25B

S25B Summary of contents

Page 1

... T -65 to 200 stg Conditions S25B ( ° ° 175 ° thJC 1 S25B thru S25JR 1200 V RRM I = DO-4 Package S25D (R) S25G (R) 400 100 200 280 70 140 400 100 200 373 373 373 -65 to 175 -65 to 175 -65 to 200 -65 to 200 ...

Page 2

... S25B thru S25JR 2 ...

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