SEMIX151GD126HDS SEMIKRON, SEMIX151GD126HDS Datasheet

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SEMIX151GD126HDS

Manufacturer Part Number
SEMIX151GD126HDS
Description
IGBT Power Module
Manufacturer
SEMIKRON
Datasheet

Specifications of SEMIX151GD126HDS

Family/system
SEMiX
Voltage (v)
1200
Current (a)
100
Chip-type
IGBT 3 (Trench)
Case
SEMiX 13

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SEMIX151GD126HDS
Quantity:
65
SEMiX151GD126HDs
Trench IGBT Modules
SEMiX151GD126HDs
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V
• High short circuit capability
• UL recognised file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperatur limited to T
• Not for new design
© by SEMIKRON
SEMiX
coefficient
max.
CE(sat)
with positive temperature
®
13
GD
C
=125°C
Absolute Maximum Ratings
Symbol
IGBT
V
I
I
I
V
t
T
Inverse diode
I
I
I
I
T
Module
I
T
V
Characteristics
Symbol
IGBT
V
V
r
V
I
C
C
C
Q
R
t
t
E
t
t
E
R
C
Cnom
CRM
psc
F
Fnom
FRM
FSM
t(RMS)
CE
CES
d(on)
r
d(off)
f
j
j
stg
CES
GES
isol
CE(sat)
CE0
GE(th)
on
off
ies
oes
res
Gint
th(j-c)
G
Rev. 0 – 16.04.2010
T
V
V
V
T
t
I
V
chiplevel
V
V
V
V
V
V
T
V
I
R
R
Conditions
I
I
AC sinus 50Hz, t = 1 min
Conditions
V
per IGBT
p
C
C
CRM
FRM
j
j
j
CC
GE
CES
GE
GE
GE
CE
CE
GE
GE
CC
GE
G on
G off
= 10 ms, sin 180°, T
= 150 °C
= 150 °C
= 100 A
= 25 °C
= 100 A
=V
= 1200 V
= 25 V
= 600 V
≤ 20 V
= 15 V
= 15 V
= 0 V
= 0 V
= - 8 V...+ 15 V
= 600 V
= 2xI
= 2xI
≤ 1200 V
= 1.7 Ω
= 1.7 Ω
CE
, I
Fnom
Cnom
C
= 4 mA
T
T
T
T
T
T
T
T
T
T
T
T
T
f = 1 MHz
f = 1 MHz
f = 1 MHz
T
T
T
T
T
T
c
c
j
c
c
j
j
j
j
j
j
j
j
j
j
j
j
j
j
= 125 °C
j
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 125 °C
= 125 °C
= 125 °C
= 125 °C
= 125 °C
= 125 °C
= 25 °C
= 80 °C
= 25 °C
= 80 °C
= 25 °C
min.
5
-40 ... 150
-40 ... 150
-40 ... 125
-20 ... 20
Values
1200
4000
typ.
11.0
0.38
0.33
7.50
168
119
100
200
152
105
100
200
700
600
800
290
605
110
1.7
0.9
7.0
5.8
0.1
7.2
10
50
12
14
2
1
max.
2.45
13.5
0.21
2.1
1.2
1.1
9.0
6.5
0.3
Unit
Unit
K/W
mΩ
mΩ
mA
mA
nC
mJ
mJ
°C
°C
°C
nF
nF
nF
µs
ns
ns
ns
ns
V
A
A
A
A
V
A
A
A
A
A
A
V
V
V
V
V
V
1

Related parts for SEMIX151GD126HDS

SEMIX151GD126HDS Summary of contents

Page 1

... SEMiX151GD126HDs ® SEMiX 13 Trench IGBT Modules SEMiX151GD126HDs Features • Homogeneous Si • Trench = Trenchgate technology • V with positive temperature CE(sat) coefficient • High short circuit capability • UL recognised file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • Case temperatur limited to T =125° ...

Page 2

... SEMiX151GD126HDs ® SEMiX 13 Trench IGBT Modules SEMiX151GD126HDs Features • Homogeneous Si • Trench = Trenchgate technology • V with positive temperature CE(sat) coefficient • High short circuit capability • UL recognised file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • Case temperatur limited to T =125° ...

Page 3

... SEMiX151GD126HDs Fig. 1: Typ. output characteristic, inclusive R Fig. 3: Typ. turn-on /-off energy = f (I Fig. 5: Typ. transfer characteristic © by SEMIKRON Fig. 2: Rated current vs. temperature I CC'+ EE' ) Fig. 4: Typ. turn-on /-off energy = Fig. 6: Typ. gate charge characteristic Rev. 0 – 16.04.2010 = ...

Page 4

... SEMiX151GD126HDs Fig. 7: Typ. switching times vs. I Fig. 9: Typ. transient thermal impedance Fig. 11: Typ. CAL diode peak reverse recovery current 4 Fig. 8: Typ. switching times vs. gate resistor R C Fig. 10: Typ. CAL diode forward charact., incl. R Fig. 12: Typ. CAL diode recovery charge Rev. 0 – 16.04.2010 ...

Page 5

... SEMiX151GD126HDs SEMiX 13 spring configuration This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. © ...

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