SEMIX223GD12E4C SEMIKRON, SEMIX223GD12E4C Datasheet
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Manufacturer Part Number
SEMIX223GD12E4C
Description
IGBT 4 (Trench)
Specifications of SEMIX223GD12E4C
Family/system
SEMiX
Voltage (v)
1200
Current (a)
225
Chip-type
IGBT 4 (Trench)
SEMiX223GD12E4c
Trench IGBT Modules
SEMiX223GD12E4c
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V
• High short circuit capability
• UL recognized, file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperature limited to T
• Product reliability results are valid for
© by SEMIKRON
SEMiX
coefficient
max.
T
j
CE(sat)
=150°C
with positive temperature
®
33c
GD
C
=125°C
Absolute Maximum Ratings
Symbol
IGBT
V
I
I
I
V
t
T
Inverse diode
I
I
I
I
T
Module
I
T
V
Characteristics
Symbol
IGBT
V
V
r
V
I
C
C
C
Q
R
t
t
E
t
t
E
R
C
Cnom
CRM
psc
F
Fnom
FRM
FSM
t(RMS)
CE
CES
d(on)
r
d(off)
f
j
j
stg
CES
GES
isol
CE(sat)
CE0
GE(th)
on
off
ies
oes
res
Gint
th(j-c)
G
Rev. 1 – 28.06.2010
T
V
V
V
T
t
I
V
chiplevel
V
V
V
V
V
V
T
V
I
R
R
di/dt
di/dt
Conditions
I
I
AC sinus 50Hz, t = 1 min
Conditions
V
per IGBT
p
C
C
CRM
FRM
j
j
j
CC
GE
CES
GE
GE
GE
CE
CE
GE
GE
CC
GE
G on
G off
= 10 ms, sin 180°, T
= 175 °C
= 175 °C
= 225 A
= 25 °C
= 225 A
=V
= 1200 V
= 25 V
on
off
= 800 V
≤ 20 V
= 15 V
= 15 V
= 0 V
= 0 V
= - 8 V...+ 15 V
= 600 V
= 3xI
= 3xI
≤ 1200 V
= 1.5 Ω
= 1.5 Ω
= 3630 A/µs
= 2235 A/µs
CE
, I
Fnom
Cnom
C
= 9 mA
T
T
T
T
T
T
T
T
T
T
T
T
T
f = 1 MHz
f = 1 MHz
f = 1 MHz
T
T
T
T
T
T
c
c
j
c
c
j
j
j
j
j
j
j
j
j
j
j
j
j
j
= 150 °C
j
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 150 °C
= 150 °C
= 150 °C
= 150 °C
= 150 °C
= 150 °C
= 25 °C
= 80 °C
= 25 °C
= 80 °C
= 25 °C
min.
5
-40 ... 175
-40 ... 175
-40 ... 125
-20 ... 20
Values
1200
1161
4000
1275
typ.
1.85
2.25
13.2
0.87
0.71
3.33
31.4
333
256
225
675
270
202
225
675
600
213
535
113
0.8
0.7
4.7
6.9
5.8
0.1
10
60
22
0.135
max.
2.45
2.1
0.9
0.8
5.3
7.3
6.5
0.3
Unit
Unit
K/W
mΩ
mΩ
mA
mA
nC
mJ
mJ
°C
°C
°C
nF
nF
nF
µs
ns
ns
ns
ns
Ω
V
A
A
A
A
V
A
A
A
A
A
A
V
V
V
V
V
V
1
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SEMIX223GD12E4C Summary of contents
... SEMiX223GD12E4c ® SEMiX 33c Trench IGBT Modules SEMiX223GD12E4c Features • Homogeneous Si • Trench = Trenchgate technology • V with positive temperature CE(sat) coefficient • High short circuit capability • UL recognized, file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • ...
... SEMiX223GD12E4c ® SEMiX 33c Trench IGBT Modules SEMiX223GD12E4c Features • Homogeneous Si • Trench = Trenchgate technology • V with positive temperature CE(sat) coefficient • High short circuit capability • UL recognized, file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • ...
... SEMiX223GD12E4c Fig. 1: Typ. output characteristic, inclusive R Fig. 3: Typ. turn-on /-off energy = f (I Fig. 5: Typ. transfer characteristic © by SEMIKRON Fig. 2: Rated current vs. temperature I CC'+ EE' ) Fig. 4: Typ. turn-on /-off energy = Fig. 6: Typ. gate charge characteristic Rev. 1 – 28.06.2010 = ...
... SEMiX223GD12E4c Fig. 7: Typ. switching times vs. I Fig. 9: Typ. transient thermal impedance Fig. 11: Typ. CAL diode peak reverse recovery current 4 Fig. 8: Typ. switching times vs. gate resistor R C Fig. 10: Typ. CAL diode forward charact., incl. R Fig. 12: Typ. CAL diode recovery charge Rev. 1 – 28.06.2010 ...
... SEMiX223GD12E4c SEMiX 33c pinout This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. © ...
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