SEMIX603GAR066HDS SEMIKRON, SEMIX603GAR066HDS Datasheet

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SEMIX603GAR066HDS

Manufacturer Part Number
SEMIX603GAR066HDS
Description
IGBT 3 (Trench)
Manufacturer
SEMIKRON
Datasheet

Specifications of SEMIX603GAR066HDS

Family/system
SEMiX
Voltage (v)
600
Current (a)
600
Chip-type
IGBT 3 (Trench)
Case
SEMiX 3s
SEMiX603GAR066HDs
Trench IGBT Modules
SEMiX603GAR066HDs
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V
• UL recognised file no. E63532
Typical Applications*
• Matrix Converter
• Resonant Inverter
• Current Source Inverter
Remarks
• Case temperature limited to T
• Product reliability results are valid for
• For short circuit: Soft R
• Take care of over-voltage caused by
© by SEMIKRON
SEMiX
coefficient
max.
T
recommended
stray inductance
j
CE(sat)
=150°C
with positive temperature
®
3s
GAR
Goff
C
=125°C
Absolute Maximum Ratings
Symbol
IGBT
V
I
I
I
V
t
T
Inverse diode
I
I
I
I
T
Freewheeling diode
I
I
I
I
T
Module
I
T
V
Characteristics
Symbol
IGBT
V
V
r
V
I
C
C
C
Q
R
C
Cnom
CRM
F
Fnom
FRM
FSM
F
Fnom
FRM
FSM
t(RMS)
CES
psc
CE
CES
GES
j
j
j
stg
isol
CE(sat)
CE0
GE(th)
ies
oes
res
Gint
G
Rev. 1 – 13.01.2012
T
T
V
V
V
T
t
T
t
T
I
V
chiplevel
V
V
V
V
V
V
T
Conditions
I
I
I
AC sinus 50Hz, t = 1 min
Conditions
V
p
p
C
CRM
FRM
FRM
j
j
j
j
terminal
j
CC
GE
CES
GE
GE
GE
CE
CE
GE
GE
GE
= 10 ms, sin 180°, T
= 10 ms, sin 180°, T
= 25 °C
= 175 °C
= 175 °C
= 175 °C
= 600 A
= 25 °C
=V
= 600 V
= 25 V
= 360 V
≤ 15 V
= 15 V
= 15 V
= 0 V
= 0 V
= - 8 V...+ 15 V
= 2xI
= 2xI
= 2xI
≤ 600 V
CE
= 80 °C
, I
Fnom
Fnom
Cnom
C
= 9.6 mA
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
f = 1 MHz
f = 1 MHz
f = 1 MHz
c
c
j
c
c
c
c
j
j
j
j
j
j
j
j
j
j
= 150 °C
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 25 °C
= 80 °C
= 25 °C
= 80 °C
= 25 °C
= 25 °C
= 80 °C
= 25 °C
min.
5
-40 ... 175
-40 ... 175
-40 ... 175
-40 ... 125
-20 ... 20
Values
1200
1200
1800
1200
1800
4000
4800
typ.
1.45
0.85
0.15
37.0
2.31
1.10
0.67
600
720
541
600
771
562
600
795
577
600
600
1.7
0.9
0.9
1.4
5.8
6
max.
1.85
0.45
2.1
0.9
1.4
2.0
6.5
1
Unit
Unit
m
m
mA
mA
nC
°C
°C
°C
°C
nF
nF
nF
µs
V
A
A
A
A
V
A
A
A
A
A
A
A
A
A
A
A
V
V
V
V
V
V
1

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SEMIX603GAR066HDS Summary of contents

Page 1

... SEMiX603GAR066HDs SEMiX ® 3s Trench IGBT Modules SEMiX603GAR066HDs Features • Homogeneous Si • Trench = Trenchgate technology • V with positive temperature CE(sat) coefficient • UL recognised file no. E63532 Typical Applications* • Matrix Converter • Resonant Inverter • Current Source Inverter Remarks • Case temperature limited to T =125° ...

Page 2

... SEMiX603GAR066HDs SEMiX ® 3s Trench IGBT Modules SEMiX603GAR066HDs Features • Homogeneous Si • Trench = Trenchgate technology • V with positive temperature CE(sat) coefficient • UL recognised file no. E63532 Typical Applications* • Matrix Converter • Resonant Inverter • Current Source Inverter Remarks • Case temperature limited to T =125° ...

Page 3

... SEMiX603GAR066HDs Fig. 1: Typ. output characteristic, inclusive R Fig. 3: Typ. turn-on /-off energy = f (I Fig. 5: Typ. transfer characteristic © by SEMIKRON Fig. 2: Rated current vs. temperature I CC'+ EE' ) Fig. 4: Typ. turn-on /-off energy = Fig. 6: Typ. gate charge characteristic Rev. 1 – 13.01.2012 = ...

Page 4

... SEMiX603GAR066HDs Fig. 7: Typ. switching times vs Fig. 9: Typ. transient thermal impedance Fig. 11: Typ. CAL diode peak reverse recovery current 4 Fig. 8: Typ. switching times vs. gate resistor R Fig. 10: Typ. CAL diode forward charact., incl. R Fig. 12: Typ. CAL diode recovery charge Rev. 1 – 13.01.2012 G CC'+EE' ...

Page 5

... SEMiX603GAR066HDs SEMiX 3s spring configuration This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © ...

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