SEMIX71GD12E4S SEMIKRON, SEMIX71GD12E4S Datasheet

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SEMIX71GD12E4S

Manufacturer Part Number
SEMIX71GD12E4S
Description
IGBT 4 (Trench)
Manufacturer
SEMIKRON
Datasheet

Specifications of SEMIX71GD12E4S

Family/system
SEMiX
Voltage (v)
1200
Current (a)
75
Chip-type
IGBT 4 (Trench)
Case
SEMiX 13
SEMiX71GD12E4s
Trench IGBT Modules
SEMiX71GD12E4s
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V
• High short circuit capability
• UL recognized, file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperature limited to T
• Product reliability results are valid for
© by SEMIKRON
SEMiX
coefficient
max.
T
j
CE(sat)
=150°C
with positive temperature
®
13
GD
C
=125°C
Absolute Maximum Ratings
Symbol
IGBT
V
I
I
I
V
t
T
Inverse diode
I
I
I
I
T
Module
I
T
V
Characteristics
Symbol
IGBT
V
V
r
V
I
C
C
C
Q
R
t
t
E
t
t
E
R
C
Cnom
CRM
psc
F
Fnom
FRM
FSM
t(RMS)
CE
CES
d(on)
r
d(off)
f
j
j
stg
CES
GES
isol
CE(sat)
CE0
GE(th)
on
off
ies
oes
res
Gint
th(j-c)
G
Rev. 0 – 05.05.2010
T
V
V
V
T
t
I
V
chiplevel
V
V
V
V
V
V
T
V
I
R
R
di/dt
di/dt
Conditions
I
I
AC sinus 50Hz, t = 1 min
Conditions
V
per IGBT
p
C
C
CRM
FRM
j
j
j
CC
GE
CES
GE
GE
GE
CE
CE
GE
GE
CC
GE
G on
G off
= 10 ms, sin 180°, T
= 175 °C
= 175 °C
= 75 A
= 25 °C
= 75 A
=V
= 1200 V
= 25 V
on
off
= 800 V
≤ 20 V
= 15 V
= 15 V
= 0 V
= 0 V
= - 8 V...+ 15 V
= 600 V
= 3xI
= 3xI
≤ 1200 V
= 1 Ω
= 1 Ω
= 2500 A/µs
= 930 A/µs
CE
, I
Fnom
Cnom
C
= 3 mA
T
T
T
T
T
T
T
T
T
T
T
T
T
f = 1 MHz
f = 1 MHz
f = 1 MHz
T
T
T
T
T
T
c
c
j
c
c
j
j
j
j
j
j
j
j
j
j
j
j
j
j
= 150 °C
j
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 150 °C
= 150 °C
= 150 °C
= 150 °C
= 150 °C
= 150 °C
= 25 °C
= 80 °C
= 25 °C
= 80 °C
= 25 °C
min.
5
-40 ... 175
-40 ... 175
-40 ... 125
-20 ... 20
Values
10.00
1200
4000
typ.
1.85
2.25
14.0
20.7
0.29
0.24
115
225
225
429
600
425
160
433
0.8
0.7
5.8
0.1
4.4
7.5
88
75
10
97
73
75
35
79
9
max.
2.45
16.0
22.0
0.38
2.1
0.9
0.8
6.5
0.3
Unit
Unit
K/W
mΩ
mΩ
mA
mA
nC
mJ
mJ
°C
°C
°C
nF
nF
nF
µs
ns
ns
ns
ns
V
A
A
A
A
V
A
A
A
A
A
A
V
V
V
V
V
V
1

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SEMIX71GD12E4S Summary of contents

Page 1

... SEMiX71GD12E4s ® SEMiX 13 Trench IGBT Modules SEMiX71GD12E4s Features • Homogeneous Si • Trench = Trenchgate technology • V with positive temperature CE(sat) coefficient • High short circuit capability • UL recognized, file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • Case temperature limited to T =125° ...

Page 2

... SEMiX71GD12E4s ® SEMiX 13 Trench IGBT Modules SEMiX71GD12E4s Features • Homogeneous Si • Trench = Trenchgate technology • V with positive temperature CE(sat) coefficient • High short circuit capability • UL recognized, file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • Case temperature limited to T =125° ...

Page 3

... SEMiX71GD12E4s Fig. 1: Typ. output characteristic, inclusive R Fig. 3: Typ. turn-on /-off energy = f (I Fig. 5: Typ. transfer characteristic © by SEMIKRON Fig. 2: Rated current vs. temperature I CC'+ EE' ) Fig. 4: Typ. turn-on /-off energy = Fig. 6: Typ. gate charge characteristic Rev. 0 – 05.05.2010 = ...

Page 4

... SEMiX71GD12E4s Fig. 7: Typ. switching times vs. I Fig. 9: Typ. transient thermal impedance Fig. 11: Typ. CAL diode peak reverse recovery current 4 Fig. 8: Typ. switching times vs. gate resistor R C Fig. 10: Typ. CAL diode forward charact., incl. R Fig. 12: Typ. CAL diode recovery charge Rev. 0 – 05.05.2010 ...

Page 5

... SEMiX71GD12E4s SEMiX 13 spring configuration This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. © ...

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