SI4430BDY-T1-E3 Vishay, SI4430BDY-T1-E3 Datasheet - Page 3

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SI4430BDY-T1-E3

Manufacturer Part Number
SI4430BDY-T1-E3
Description
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,14A I(D),SO
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI4430BDY-T1-E3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4.5 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
36nC @ 4.5V
Power - Max
1.6W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0045 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
14 A
Power Dissipation
1600 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI4430BDY-T1-E3TR

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73184
S09-0228-Rev. D, 09-Feb-09
0.010
0.008
0.006
0.004
0.002
0.000
60
10
6
5
4
3
2
1
0
1
0.00
0
0
V
I
Source-Drain Diode Forward Voltage
D
DS
5
10
= 20 A
On-Resistance vs. Drain Current
0.2
= 15 V
V
V
T
GS
J
SD
Q
= 150 °C
10
= 4.5 V
g
- Source-to-Drain Voltage (V)
- Total Gate Charge (nC)
20
0.4
I
D
- Drain Current (A)
Gate Charge
15
30
0.6
V
20
GS
= 10 V
40
0.8
25
T
J
= 25 °C
50
1.0
30
1.2
60
35
4000
3500
3000
2500
2000
1500
1000
0.025
0.020
0.015
0.010
0.005
0.000
500
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
- 25
rss
V
I
D
GS
= 20 A
5
= 10 V
V
2
T
DS
V
0
J
GS
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
10
- Gate-to-Source Voltage (V)
C
25
oss
Capacitance
4
50
15
Vishay Siliconix
C
Si4430BDY
iss
75
6
20
I
D
www.vishay.com
100
= 20 A
25
8
125
150
30
10
3

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