SI4430BDY-T1-E3 Vishay, SI4430BDY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4430BDY-T1-E3
• Description: TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,14A I(D),SO
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4430BDY-T1-E3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.5 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 36nC @ 4.5V
• Power - Max: 1.6W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0045 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 14 A
• Power Dissipation: 1600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4430BDY-T1-E3TR

Si4430BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
0.4
0.2
0.0
0.01
0.1
- 50
2
1
10
-4
- 25
0.1
Duty Cycle = 0.5
0.2
0.05
0.02
0
Single Pulse
Threshold Voltage
I
T
D
J
= 250 µA
25
- Temperature (°C)
10
-3
50
Limited by R
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
100
0.1
10
10
100
1
0.1
DS (on)
-2
* V
125
GS
*
Single Pulse
T
>
C
= 25 °C
minimum V
V
150
Square Wave Pulse Duration (s)
DS
Safe Operating Area
- Drain-to-Source Voltage (V)
10
1
-1
GS
at which R
10
DS(on)
200
160
120
80
40
1
0
0.001
is specified
10 ms
100 ms
1 s
10 s
DC
1 ms
100
0.01
Single Pulse Power
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
-
Time (s)
T
t
1
A
S09-0228-Rev. D, 09-Feb-09
0.1
= P
t
2
Document Number: 73184
DM
Z
thJA
thJA
100
t
t
1
2
(t)
= 67 °C/W
1
600
10