SI4453DY-T1-E3 Vishay, SI4453DY-T1-E3 Datasheet

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SI4453DY-T1-E3

Manufacturer Part Number
SI4453DY-T1-E3
Description
TRANSISTOR,MOSFET,P-CHANNEL,12V V(BR)DSS,10A I(D),SO
Manufacturer
Vishay
Datasheets

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4453DY-T1-E3
Manufacturer:
VISHAY
Quantity:
20 000
Part Number:
SI4453DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 72175
S09-0705-Rev. C, 27-Apr-09
Ordering Information:
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
- 12
(V)
G
S
S
S
1
2
3
4
T op V i e w
Si4453DY -T1-E3
Si4453DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
0.00775 at V
0.01025 at V
SO-8
0.0065 at V
R
DS(on)
J
a
= 150 °C)
a
8
7
6
5
GS
GS
GS
(Ω)
(Lead (Pb)-free)
= - 4.5 V
= - 2.5 V
= - 1.8 V
P-Channel 12-V (D-S) MOSFET
D
D
D
D
a
a
A
= 25 °C, unless otherwise noted
I
Steady State
Steady State
D
- 14
- 13
- 12
T
T
T
T
(A)
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Compliant to RoHS Directive 2002/95/EC
• Load Switch
• Battery Switch
Symbol
Symbol
T
R
R
Definition
J
V
V
I
P
, T
I
DM
thJA
thJF
I
DS
GS
D
S
D
stg
®
Power MOSFET
Typical
- 11.5
10 s
- 2.7
- 14
3.0
1.9
33
70
16
G
P-Channel MOSFET
- 55 to 150
- 12
- 50
± 8
Steady State
S
D
Maximum
- 1.36
0.95
- 10
1.5
- 8
42
84
21
Vishay Siliconix
Si4453DY
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

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