SI4455DY-T1-E3 Vishay, SI4455DY-T1-E3 Datasheet
SI4455DY-T1-E3
Manufacturer Part Number
SI4455DY-T1-E3
Description
P-CHANNEL 150-V (D-S) MOSFET
Manufacturer
Vishay
Specifications of SI4455DY-T1-E3
Configuration
Single Quad Drain Triple Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.295 Ohms
Drain-source Breakdown Voltage
- 150 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2 A
Power Dissipation
3.1 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Minimum Operating Temperature
- 50 C
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4455DY-T1-E3
Manufacturer:
VISHAY
Quantity:
25 000
Part Number:
SI4455DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Based on T
Document Number: 68631
S09-0393-Rev. B, 09-Mar-09
Ordering Information: Si4455DY-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
PRODUCT SUMMARY
V
- 150
DS
(V)
C
G
S
S
S
= 25 °C.
0.315 at V
0.295 at V
1
2
3
4
R
Si4455DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
DS(on)
GS
Top View
GS
SO-8
J
(Ω)
= - 6.0 V
= - 10 V
= 150 °C)
P-Channel 150-V (D-S) MOSFET
8
7
6
5
I
- 8.9
- 8.6
D
D
D
D
D
(A)
c
c
A
= 25 °C, unless otherwise noted
Q
23.2 nC
g
(Typ.)
New Product
L = 0.1 mH
T
T
T
T
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100% R
• 100% UIS Tested
• Active Clamp in Intermediate DC/DC Power Supplies
• H-Bridge High Side Switch for Lighting Application
Available
Symbol
T
J
V
V
E
I
I
P
, T
DM
I
I
AS
GS
DS
AS
D
S
g
D
stg
Tested
G
®
Power MOSFET
P-Channel MOSFET
S
D
- 50 to 150
- 2.0
- 1.6
- 2.5
3.1
2.0
11.25
Limit
- 150
± 20
- 2.8
- 2.3
- 4.9
- 15
- 15
5.9
3.8
a, b
a, b
a, b
a, b
a, b
Vishay Siliconix
Si4455DY
www.vishay.com
Unit
mJ
°C
W
V
A
1
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