SI4493DY-T1-E3 Vishay, SI4493DY-T1-E3 Datasheet

SI4493DY-T1-E3

Manufacturer Part Number

SI4493DY-T1-E3

Description

TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,10A I(D),SO

Manufacturer

Vishay

Datasheet

1.SI4493DY-T1-E3.pdf (9 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SI4493DY-T1-E3

Manufacturer:

VISHAY

Quantity:

20 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

SI4493DY-T1-E3

Manufacturer:

VISHAY/威世

Quantity:

20 000

Current page: 1 of 9
Download datasheet (225Kb)

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

Document Number: 72256

S09-0705-Rev. C, 27-Apr-09

Ordering Information: Si4493DY-T1-E3 (Lead (Pb)-free)

ABSOLUTE MAXIMUM RATINGS T

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient

Maximum Junction-to-Foot (Drain)

PRODUCT SUMMARY

- 20

(V)

0.00775 at V

0.01225 at V

Si4493DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

DS(on)

T op V i e w

= 150 °C)

SO-8

(Ω)

= - 4.5 V

= - 2.5 V

P-Channel 2.5-V (G-S) MOSFET

= 25 °C, unless otherwise noted

Steady State

- 14

- 11

(A)

t ≤ 10 s

= 25 °C

= 70 °C

= 25 °C

= 70 °C

FEATURES

APPLICATIONS

• Halogen-free According to IEC 61249-2-21

• TrenchFET

• Compliant to RoHS Directive 2002/95/EC

• Load Switch

Symbol

Definition

, T

thJA

thJF

P-Channel MOSFET

stg

Power MOSFET

Typical

- 2.7

10 s

- 14

- 11

3.0

1.9

- 55 to 150

± 12

- 20

- 50

Steady State

Maximum

- 1.36

0.95

- 10

1.5

- 8

Vishay Siliconix

Si4493DY

www.vishay.com

°C/W

Unit

°C

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