SI4622DY-T1-E3 Vishay, SI4622DY-T1-E3 Datasheet

SI4622DY-T1-E3

Manufacturer Part Number

SI4622DY-T1-E3

Description

DUAL N-CH 30-V (D-S) MOSFET W/SCHOTTKY

Manufacturer

Vishay

Datasheets

1.SI4622DY.pdf (12 pages)

2.SI4622DY-T1-E3.pdf (15 pages)

Specifications of SI4622DY-T1-E3

Configuration

Dual Dual Drain

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.016 Ohms

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

8 A, 6.7 A

Power Dissipation

2.2 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Package / Case

SOIC-8 Narrow

Minimum Operating Temperature

- 55 C

Lead Free Status / Rohs Status

Details

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SI4622DY-T1-E3

Manufacturer:

VISHAY

Quantity:

12 921

Company:

Meier Automation Equipment Co., Limited

Part Number:

SI4622DY-T1-E3

Manufacturer:

VISHAY/威世

Quantity:

20 000

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Notes:

a. Based on T

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under Steady State conditions is 110 °C/W (Channel-1) and 110 °C/W (Channel-2).

e. Package limited.

Document Number: 68695

S-81442-Rev. A, 23-Jun-08

THERMAL RESISTANCE RATINGS

Channel-1

Channel-2

Parameter

Maximum Junction-to-Ambient

Maximum Junction-to-Foot (Drain)

PRODUCT SUMMARY

ABSOLUTE MAXIMUM RATINGS T

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Pulsed Drain Current (10 µs Pulse Width)

Source-Drain Current Diode Current

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

Ordering Information: Si4622DY-T1-E3 (Lead (Pb)-free)

Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

= 25 °C.

(V)

0.0186 at V

0.0290 at V

0.0160 at V

0.0264 at V

T op V i e w

SO-8

DS(on)

= 150 °C)

b, d

(Ω)

= 4.5 V

= 10 V

8.0

(A)

= 25 °C, unless otherwise noted

Steady State

L = 0.1 mH

t ≤ 10 s

(Typ.)

New Product

= 25 °C

= 70 °C

= 25 °C

= 70 °C

= 25 °C

= 70 °C

= 25 °C

= 70 °C

FEATURES

APPLICATIONS

• SkyFET

•

• Notebook Logic DC-DC

• Low Current DC-DC

Symbol

Power MOSFET and Schottky Diode

100 % R

, T

thJA

thJF

N-Channel MOSFET

stg

™

and UIS Tested

Monolithic TrenchFET

Typ.

Channel-1

7.2

1.8

2.2

1.4

± 20

31.2

b, c, e

2.8

3.3

2.1

b, c

Schottky Diode

Max.

- 55 to 150

Typ.

Channel-2

6.7

5.3

1.7

2.0

1.3

± 16

11.2

Vishay Siliconix

6.7

2.6

3.1

2.0

b, c

Max.

62.5

Si4622DY

N-Channel MOSFET

www.vishay.com

°C/W

Unit

°C

RoHS

COMPLIANT

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