SI4650DY-T1-E3 Vishay, SI4650DY-T1-E3 Datasheet
SI4650DY-T1-E3
Manufacturer Part Number
SI4650DY-T1-E3
Description
DUAL N-CH 30-V (D-S) MOSFET W/SCHOTTKY
Manufacturer
Vishay
Series
TrenchFET®r
Specifications of SI4650DY-T1-E3
Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
18 mOhm @ 8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
3V @ 1mA
Gate Charge (qg) @ Vgs
40nC @ 10V
Input Capacitance (ciss) @ Vds
1550pF @ 15V
Power - Max
3.1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI4650DY-T1-E3TR
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 Board.
c. t = 10 s.
d. Maximum under Steady State conditions is 110 °C/W (Channel-1) and 110 °C/W (Channel-2).
e. Package Limited.
Document Number: 70449
S-72197-Rev. B, 22-Oct-07
Channel-1
Channel-2
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
SCHOTTKY PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (10 µs Pulse Width)
Source-Drain Current Diode Current
Pulsed Source-Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
V
DS
30
Ordering Information: Si4650DY-T1-E3 (Lead (Pb)-free)
(V)
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
S
1
V
C
/D
DS
G
G
S
= 25 °C.
30
30
2
1
2
2
(V)
Diode Forward Voltage
1
2
3
4
0.022 at V
0.022 at V
0.018 at V
0.018 at V
0.43 V at 1.0 A
T op V i e w
r
DS(on)
V
SO-8
J
SD
= 150 °C)
b, d
GS
GS
GS
GS
(V)
(Ω)
= 4.5 V
= 4.5 V
= 10 V
= 10 V
8
7
6
5
D
D
S
S
1
I
1
1
1
D
/D
/D
(A)
8.0
8.0
8.0
8.0
2
2
a, e
A
I
F
= 25 °C, unless otherwise noted
Steady State
2.8
Q
L = 0.1 mH
T
T
T
T
T
T
T
T
T
T
(A)
g
C
C
A
A
C
A
C
C
A
A
t ≤ 10 s
10.5
10.5
New Product
(Typ)
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
a
FEATURES
APPLICATIONS
• TrenchFET
• 100 % R
• Notebook Logic DC-DC
• Low Current DC-DC
Symbol
Symbol
T
R
G
R
J
V
V
E
I
I
I
P
, T
DM
1
I
I
SM
AS
thJA
thJF
GS
DS
AS
D
S
D
stg
N-Channel MOSFET
g
D
S
and UIS Tested
Typ
®
1
1
52
35
Channel-1
Channel-1
Power MOSFET
7.8
6.2
1.8
1.2
± 20
8.0
2
7.8
2.8
3.1
30
30
30
20
20
b, c
2
b, c
b, c
b, c
b, c
e
Max
62.5
40
- 55 to 150
G
2
N-Channel MOSFET
Typ
52
35
Channel-2
Channel-2
7.8
6.2
1.8
1.2
± 20
8.0
2
Vishay Siliconix
7.8
2.8
3.1
S
30
30
30
20
20
D
b, c
2
2
b, c
b, c
b, c
b, c
2
e
Max
62.5
40
Si4650DY
www.vishay.com
Schottky Diode
°C/W
Unit
Unit
mJ
°C
W
V
A
RoHS
COMPLIANT
1
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