SI4831BDY-T1-E3 Vishay, SI4831BDY-T1-E3 Datasheet
SI4831BDY-T1-E3
Manufacturer Part Number
SI4831BDY-T1-E3
Description
P-CH 30-V (D-S) MOSFET W/SCHOTTKY DI
Manufacturer
Vishay
Specifications of SI4831BDY-T1-E3
Configuration
Single Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.042 Ohms
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
5.1 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
Details
Notes:
a. Based on T
b. Surface Mounted on FR4 Board.
c. t ≤ 10 sec.
d. Maximum under Steady State conditions is 110 °C/W.
Document Number: 70483
S-71696-Rev. A, 13-Aug-07
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
Continuous Drain Current (T
Pulsed Drain Current (MOSFET)
Continuous Source Current (MOSFET Diode Conduction)
Average Forward Current (Schottky)
Pulsed Forward Current (Schottky)
Maximum Power Dissipation (MOSFET and Schottky)
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (MOSFET and Schottky)
Maximum Junction-to-Foot (Drain) (MOSFET and Schottky)
MOSFET PRODUCT SUMMARY
SCHOTTKY PRODUCT SUMMARY
V
V
KA
DS
- 30
30
Ordering Information: Si4831BDY-T1-E3 (Lead (Pb)-free)
(V)
(V)
C
G
A
A
S
= 25 °C.
P-Channel 30-V (D-S) MOSFET with Schottky Diode
0.065 at V
0.042 at V
1
2
3
4
Diode Forward Voltage
r
DS(on)
0.53 V at 3 A
Top View
SO-8
GS
GS
V
J
f
(Ω)
= - 4.5 V
= 150 °C) (MOSFET)
= - 10 V
(V)
8
7
6
5
K
K
D
D
I
D
- 6.6
- 5.3
(A)
a
A
I
D
Q
= 25 °C, unless otherwise noted
3.0
b, c, d
g
(A)
7.8
(Typ)
a
T
T
T
T
T
T
T
T
T
T
C
C
C
C
C
A
A
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
Symbol
R
R
thJA
thJF
FEATURES
APPLICATIONS
• LITTLE FOOT
• 100 % R
• HDD
• Asynchronous Rectification
Symbol
T
J
V
V
V
I
I
P
, T
DM
I
I
I
FM
GS
DS
KA
D
S
F
D
g
stg
Tested
G
Typical
®
P-Channel MOSFET
53
30
Plus Power MOSFET
S
D
- 55 to 150
- 5.1
- 3.9
- 1.6
2.0
1.2
Limit
± 20
- 6.6
- 5.2
- 2.7
- 30
- 30
- 30
- 3
- 20
3.3
2.1
Maximum
b, c
b, c
b, c
b, c
b, c
b
Vishay Siliconix
62.5
37
Si4831BDY
www.vishay.com
K
A
°C/W
Unit
Unit
RoHS
COMPLIANT
°C
W
V
A
1
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