SI4892DY-T1-E3 Vishay, SI4892DY-T1-E3 Datasheet

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SI4892DY-T1-E3

Manufacturer Part Number
SI4892DY-T1-E3
Description
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,8.8A I(D),SO
Manufacturer
Vishay
Datasheets

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4892DY-T1-E3
Manufacturer:
VISHAY
Quantity:
20 000
Part Number:
SI4892DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
Document Number: 71407
S-51455—Rev. F, 01-Aug-05
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RATINGSRESISTANCE
Maximum Junction to Ambient (MOSFET)
Maximum Junction-to-Ambient (MOSFET)
Maximum Junction-to-Foot (Drain)
Ordering Information: Si4892DY-T1
V
Surface Mounted on 1” x 1” FR4 Board.
DS
30
30
(V)
G
S
S
S
1
2
3
4
Si4892DY-T1–E3 (Lead (Pb)–free)
Top View
J
J
SO-8
a
a
0.020 @ V
0.012 @ V
= 150_C)
= 150_C)
Parameter
Parameter
r
DS(on)
a
a
GS
GS
8
7
6
5
a
a
(W)
N-Channel 30-V (D-S) MOSFET
= 4.5 V
= 10 V
a
D
D
D
D
A
Steady State
Steady State
= 25_C UNLESS OTHERWISE NOTED)
L = 0 1 mH
L = 0.1 mH
t v 10 sec
T
T
T
T
A
A
A
A
I
N-Channel MOSFET
= 25_C
= 70_C
= 25_C
= 70_C
D
12.4
9.6
(A)
G
Symbol
Symbol
T
R
R
R
J
V
V
E
I
I
P
P
, T
DM
thJA
thJF
I
I
I
AS
GS
DS
AS
D
D
S
D
D
stg
S
D
FEATURES
D TrenchFETr Power MOSFET
D High Efficiency PWM Optimized
D 100% R
D 100% UIS Tested
10 secs
Typical
12.4
2.60
9.9
3.1
2.0
34
70
17
g
Tested
–55 to 150
"20
"50
30
20
20
Steady State
Maximum
Vishay Siliconix
8.8
7.0
1.3
1.6
1.0
40
80
20
Si4892DY
www.vishay.com
Unit
Unit
_C/W
mJ
_C
W
W
V
V
A
COMPLIANT
RoHS
1

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