SI5433BDC-T1-E3 Vishay, SI5433BDC-T1-E3 Datasheet
SI5433BDC-T1-E3
Specifications of SI5433BDC-T1-E3
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SI5433BDC-T1-E3 Summary of contents
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... 1 1206-8 ChipFET ® Bottom View Ordering Information: Si5433BDC-T1-E3 (Lead (Pb)-free) Si5433BDC-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current a Continuous Source Current a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...
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... Si5433BDC Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...
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... V - Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 73208 S-83054-Rev. B, 29-Dec-08 1800 1600 1400 1200 1000 °C J 0.8 1.0 1.2 Si5433BDC Vishay Siliconix C iss 800 600 400 C oss 200 C rss Drain-to-Source Voltage (V) DS Capacitance 1.4 1.2 1.0 ...
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... Si5433BDC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 0 250 D 0.2 0.1 0.0 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 µA 75 100 125 150 100 Limited by R DS(on D(on) Limited ° ...
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... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73208. Document Number: 73208 S-83054-Rev. B, 29-Dec- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si5433BDC Vishay Siliconix - www.vishay.com 10 5 ...
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... E 1.825 1.90 1.975 0.072 E 1.55 1.65 1.70 0.061 1 e 0.65 BSC L 0.28 − 0.42 0.011 S 0.55 BSC 5_Nom Package Information Vishay Siliconix Backside View DETAIL X INCHES Nom Max − 0.043 0.012 0.014 0.006 0.008 − 0.0015 0.120 0.122 ...
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... The addition of a further copper area and/or the addition of vias to other board layers will enhance the performance still further example of this method is implemented on the Vishay Siliconix Evaluation Board described in the next section (Figure 3). G THE VISHAY SILICONIX EVALUATION BOARD FOR THE SINGLE 1206-8 The ChipFET 1206-08 evaluation board measures 0 ...
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... AN811 Vishay Siliconix Front of Board ChipFETr THERMAL PERFORMANCE Junction-to-Foot Thermal Resistance (the Package Performance) Thermal performance for the 1206-8 ChipFET measured as junction-to-foot thermal resistance is 15_C/W typical, 20_C/W maximum for the single device. The “foot” is the drain lead of the device as it connects with the body. This is identical to the ...
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... Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR 1206-8 ChipFET Return to Index Return to Index www.vishay.com 2 ® 0.093 (2.357) 0.026 0.016 (0.650) (0.406) Recommended Minimum Pads Dimensions in Inches/(mm) 0.010 (0.244) Document Number: 72593 Revision: 21-Jan-08 ...
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