SI5441BDC-T1-E3 Vishay, SI5441BDC-T1-E3 Datasheet

TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,4.4A I(D),CHIP

SI5441BDC-T1-E3

Manufacturer Part Number
SI5441BDC-T1-E3
Description
TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,4.4A I(D),CHIP
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI5441BDC-T1-E3

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
45 mOhm @ 4.4A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4.4A
Vgs(th) (max) @ Id
1.4V @ 250µA
Gate Charge (qg) @ Vgs
22nC @ 4.5V
Power - Max
1.3W
Mounting Type
Surface Mount
Package / Case
1206-8 ChipFET™
Minimum Operating Temperature
- 55 C
Configuration
Single Hex Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.08 Ohm @ 2.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
4.4 A
Power Dissipation
1300 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI5441BDC-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI5441BDC-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI5441BDC-T1-E3
Quantity:
70 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 73207
S-83054-Rev. B, 29-Dec-08
Ordering Information: Si5441BDC-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
DS
- 20
(V)
D
1206-8 ChipFET
D
Bottom View
0.045 at V
0.052 at V
0.080 at V
D
D
R
S
Si5441BDC-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
DS(on)
D
GS
GS
GS
1
G
= - 4.5 V
= - 3.6 V
= - 2.5 V
(Ω)
a
®
J
a
= 150 °C)
a
P-Channel 2.5-V (G-S) MOSFET
Marking Code
a
BK XX
I
D
- 6.1
- 5.7
- 4.6
(A)
Part # Code
b, c
Lot Traceability
and Date Code
A
Q
= 25 °C, unless otherwise noted
g
Steady State
Steady State
11.5
T
T
T
T
(Typ.)
A
A
A
A
t ≤ 5 s
= 25 °C
= 85 °C
= 25 °C
= 85 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
Symbol
Symbol
T
R
R
J
Available
TrenchFET
V
V
I
P
, T
I
DM
thJA
thJF
I
DS
GS
D
S
D
stg
®
Power MOSFET
Typical
- 6.1
- 4.4
- 2.1
5 s
2.5
1.3
48
85
17
G
P-Channel MOSFET
- 55 to 150
± 12
- 20
- 20
260
Steady State
S
D
Maximum
- 4.4
- 3.2
- 1.1
1.3
0.7
50
95
20
Vishay Siliconix
Si5441BDC
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

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SI5441BDC-T1-E3 Summary of contents

Page 1

... V GS ® 1206-8 ChipFET Marking Code Bottom View Ordering Information: Si5441BDC-T1-E3 (Lead (Pb)-free) Si5441BDC-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current a Continuous Source Current a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si5441BDC Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... V - Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 73207 S-83054-Rev. B, 29-Dec-08 1200 1000 °C J 0.8 1.0 1.2 Si5441BDC Vishay Siliconix C iss 800 600 400 C oss 200 C rss Drain-to-Source Voltage (V) DS Capacitance 1.4 1.2 1.0 0.8 ...

Page 4

... Si5441BDC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 0 250 D 0.2 0.1 0.0 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 µA 75 100 125 150 100 Limited by R DS(on D(on) Limited ° ...

Page 5

... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73207. Document Number: 73207 S-83054-Rev. B, 29-Dec- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si5441BDC Vishay Siliconix - www.vishay.com 10 5 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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