SI5855DC-T1-E3 Vishay, SI5855DC-T1-E3 Datasheet

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... Marking Code Bottom View Ordering Information: Si5855DC-T1-E3 (Lead (Pb)-free) Si5855DC-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (T = 150 °C) (MOSFET) J Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction) ...

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... Si5855DC Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter a Junction-to-Ambient Junction-to-Foot Notes: a. Surface mounted on 1" x 1" FR4 board. MOSFET SPECIFICATIONS T Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage ...

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... On-Resistance vs. Drain Current 2 Total Gate Charge (nC) g Gate Charge Document Number: 72232 S10-0547-Rev. C, 08-Mar-10 2 1.5 V 2.5 3.0 3 Si5855DC Vishay Siliconix ° ° 0.0 0.5 1.0 1.5 2 Gate-to-Source Voltage (V) GS Transfer Characteristics 800 C iss 600 400 200 C oss C rss Drain-to-Source Voltage (V) DS Capacitance 1 ...

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... Si5855DC Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0.3 0.2 0.1 0.0 - 0 Temperature (°C) J Threshold Voltage www.vishay.com °C J 0.8 1.0 1.2 1 250 µ 100 125 ...

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... Reverse Current vs. Junction Temperature Document Number: 72232 S10-0547-Rev. C, 08-Mar- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot 75 100 125 150 Si5855DC Vishay Siliconix Notes Duty Cycle Per Unit Base = °C/W thJA (t) 3 ...

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... Si5855DC Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

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